Part Number Hot Search : 
2500T AN5312 R2040 TF5134N BCM70 4401N IP122 AR5S31U
Product Description
Full Text Search
 

To Download DMG7430LFG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  DMG7430LFG document number: ds35497 rev. 5 - 2 1 of 7 www.diodes.com february 2012 ? diodes incorporated DMG7430LFG advance information powerdi is a registered tradema rk of diodes incorporated n-channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d max t a = 25c 30v 11m ? @ v gs = 10v 10.5a 15m ? @ v gs = 4.5v 9.2a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? backlighting ? power management functions ? dc-dc converters features and benefits ? low r ds(on) ? ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so-8 enabling smaller end product ? " green? component and rohs compliant (note 1) ? qualified to aec-q101 standards for high reliability mechanical data ? case: powerdi ? 3333-8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.072 grams (approximate) ordering information (note 2) part number case packaging DMG7430LFG-7 powerdi ? 3333-8 2000/tape & reel DMG7430LFG-13 powerdi ? 3333-8 3000/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2). all applicable rohs exemptions applied. 2. for packaging details, go to our website at http://www.diodes.com. marking information 1 2 3 4 8 7 6 5 top view internal schematic top view bottom view powerdi ? 3333-8 g73 yyww g73 = product type marking code yyww = date code marking yy = last digit of year (ex: 11 = 2011) ww = week code (01 ~ 53) ? green s s s g d d d d pin 1
DMG7430LFG document number: ds35497 rev. 5 - 2 2 of 7 www.diodes.com february 2012 ? diodes incorporated DMG7430LFG advance information powerdi is a registered tradema rk of diodes incorporated maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = 10v steady state t a = 25c t a = 70c i d 10.5 8.5 a t<10s t a = 25c t a = 70c i d 14 11 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 90 a maximum continuous body diode forward current (note 4) i s 3.0 a avalanche current (note 5) l = 0.1mh i ar 22 a repetitive avalanche energy (note 5) l = 0.1mh e ar 24 mj thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 3) steady state p d 0.9 w t<10s 1.5 thermal resistance, junction to ambient (note 3) steady state r ja 142 c/w t<10s 78 total power dissipation (note 4) steady state p d 2.2 w t<10s 3.5 thermal resistance, junction to ambient (note 4) steady state r ja 59 c/w t<10s 33 thermal resistance, junction to case (note 4) r jc 11 operating and storage temperature range t j, t stg -55 to +150 c t1, pulse duration time (sec) fig. 1 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 0 10 20 30 40 50 60 70 80 90 100 p , p eak t r ansien t p o iwe r (w) (pk) single pulse r = 140c/w r = r * r t - t = p * r ? ja ja(t) (t) ja ja ja(t) 0.01 0.1 1 10 100 v , drain-source voltage (v) fig. 2 soa, safe operation area ds 0.01 0.1 1 10 100 i, d r ai n c u r r e n t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w
DMG7430LFG document number: ds35497 rev. 5 - 2 3 of 7 www.diodes.com february 2012 ? diodes incorporated DMG7430LFG advance information powerdi is a registered tradema rk of diodes incorporated 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e r = r * r ja(t) (t) ja ja r = 140c/w duty cycle, d = t1/t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse electrical characteristics t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 1.4 - 2.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 7 11 m v gs = 10v, i d = 20a - 11 15 v gs = 4.5v, i d = 20a forward transfer admittance |y fs | - 74 - s v ds = 5v, i d = 20a diode forward voltage v sd - 0.75 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 7) input capacitance c iss - 1281 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 145 - pf reverse transfer capacitance c rss - 125 - pf gate resistance r g - 1.2 - v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 4.5v) q g - 12.5 - nc v ds = 15v, i d = 12a total gate charge (v gs = 10v) q g - 26.7 - nc gate-source charge q g s - 3.6 - nc gate-drain charge q g d - 4.4 - nc turn-on delay time t d ( on ) - 5.2 - ns v dd = 15v, v gs = 10v, r l = 1.25 ? , r g = 3 ? , turn-on rise time t r - 21.2 - ns turn-off delay time t d ( off ) - 22.3 - ns turn-off fall time t f - 5.1 - ns reverse recovery time t r r - 8.5 - ns i f = 12a, di/dt = 500a/ s reverse recovery charge q r r - 7.0 - nc i f = 12a, di/dt = 500a/ s notes: 3. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 4. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 5. i ar and e ar rating are based on low frequency and duty cycles to keep t j = 25c 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to product testing.
DMG7430LFG document number: ds35497 rev. 5 - 2 4 of 7 www.diodes.com february 2012 ? diodes incorporated DMG7430LFG advance information powerdi is a registered tradema rk of diodes incorporated 0 0.5 1.0 1.5 2.0 v = 5.0v ds v , drain-source voltage (v) fig.4 typical output characteristic ds 0 5 10 15 20 25 30 i, d r ain c u r r en t (a) d 0 5 10 15 20 25 30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v , gate-source voltage gs fig. 5 typical transfer characteristics i, d r ain c u r r en t (a) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i , drain-source current d fig. 6 typical on-resistance vs. drain current and gate voltage v= 4.5v gs v= 10v gs 0 0.01 0.02 0.03 0.04 345678910 v , gate voltage (v) gs fig. 7 typical on-resistance vs. gate voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i = 20a d i = 10a d 0 0.01 0.02 0.03 0 5 10 15 20 25 30 i , drain current d fig. 8 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.8 r , d r ain-s o u r c e on-resistance (normalized) ds(on) 1.6 50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 9 on-resistance variation with temperature j v = 4.5v i= 10a gs d v=v i= 20a gs d 10
DMG7430LFG document number: ds35497 rev. 5 - 2 5 of 7 www.diodes.com february 2012 ? diodes incorporated DMG7430LFG advance information powerdi is a registered tradema rk of diodes incorporated 0 0.01 0.02 0.03 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 10 on-resistance variation with temperature j r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = 4.5v i= 10a gs d v=v i= 20a gs d 10 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 11 gate threshold variation vs. ambient temperature j v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i= 1ma d i = 250a d 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig.12 diode forward voltage vs. current i, s o u r c e c u r r e n t (v) s t= 25c a 0 200 400 600 800 1,000 1,200 1,400 1,600 1,800 2,000 0 5 10 15 20 25 30 c , j u n c t i o n c a p a c i t a n c e (p f ) t v , drain-source voltage (v) ds fig. 13 typical junction capacitance c iss c oss c rss f = 1mhz 0102030405060708090100 v , drain-source voltage (v) ds fig. 14 typical drain-source leakage current vs. voltage 1 10 100 1,000 10,000 i, d r ain leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 v g a t e t h r es h o ld v o l t a g e (v) gs q ( n c ) g , total gate charge fig. 15 gate charge v = 15v i= a ds d 12
DMG7430LFG document number: ds35497 rev. 5 - 2 6 of 7 www.diodes.com february 2012 ? diodes incorporated DMG7430LFG advance information powerdi is a registered tradema rk of diodes incorporated package outline dimensions suggested pad layout powerdi ? 3333-8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? 0.20 l 0.35 0.45 0.40 l1 ? ? 0.39 e ? ? 0.65 z ? ? 0.515 all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 14 85 x y y1 y3 y2 x2 c 14 85 g g1
DMG7430LFG document number: ds35497 rev. 5 - 2 7 of 7 www.diodes.com february 2012 ? diodes incorporated DMG7430LFG advance information powerdi is a registered tradema rk of diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expecte d to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com


▲Up To Search▲   

 
Price & Availability of DMG7430LFG
Newark

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
07AH3752
Diodes Incorporated Mosfet, N-Ch, 30V, 10.5A, Powerdi3333; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Diodes Inc. DMG7430LFG-7 1000: USD0.135
500: USD0.154
250: USD0.172
100: USD0.19
50: USD0.23
25: USD0.269
10: USD0.309
1: USD0.418
BuyNow
0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
DMG7430LFG-7DITR-ND
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 50000: USD0.08888
10000: USD0.09407
6000: USD0.10452
2000: USD0.10905
BuyNow
52000
DMG7430LFG-7
DMG7430LFG-7DICT-ND
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 1000: USD0.11845
500: USD0.1742
100: USD0.1881
10: USD0.314
1: USD0.4
BuyNow
3662
DMG7430LFG-7
DMG7430LFG-7DIDKR-ND
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 1000: USD0.11845
500: USD0.1742
100: USD0.1881
10: USD0.314
1: USD0.4
BuyNow
0
DMG7430LFGQ-7
DMG7430LFGQ-7DI-ND
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 10000: USD0.2055
6000: USD0.2175
2000: USD0.22959
BuyNow
0
DMG7430LFGQ-13
DMG7430LFGQ-13DI-ND
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 9000: USD0.21612
6000: USD0.22875
3000: USD0.24145
BuyNow
0

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
DMG7430LFG-7
Diodes Incorporated Trans MOSFET N-CH 30V 10.5A 8-Pin PowerDI 3333-8 T/R - Tape and Reel (Alt: DMG7430LFG-7) 200000: USD0.08816
20000: USD0.08959
16000: USD0.09101
12000: USD0.09456
8000: USD0.09741
4000: USD0.10043
2000: USD0.10416
BuyNow
4000
DMG7430LFGQ-13
DMG7430LFGQ-13
Diodes Incorporated Transistor MOSFET N-Channel 30V 8-Pin PowerDI3333 T/R - Tape and Reel (Alt: DMG7430LFGQ-13) 300000: USD0.17149
30000: USD0.17426
24000: USD0.17702
18000: USD0.18394
12000: USD0.18947
6000: USD0.19535
3000: USD0.20261
BuyNow
0
DMG7430LFGQ-7
DMG7430LFGQ-7
Diodes Incorporated Transistor MOSFET N-Channel 30V 8-Pin PowerDI3333 T/R - Tape and Reel (Alt: DMG7430LFGQ-7) 200000: USD0.16306
20000: USD0.16569
16000: USD0.16832
12000: USD0.1749
8000: USD0.18016
4000: USD0.18574
2000: USD0.19265
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
621-DMG7430LFG-7
Diodes Incorporated MOSFETs MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K 1: USD0.38
10: USD0.271
100: USD0.155
1000: USD0.108
2000: USD0.102
10000: USD0.096
24000: USD0.093
50000: USD0.089
BuyNow
141195
DMG7430LFGQ-7
621-DMG7430LFGQ-7
Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V 1: USD0.62
10: USD0.548
100: USD0.374
500: USD0.313
1000: USD0.266
2000: USD0.242
4000: USD0.213
10000: USD0.205
BuyNow
2270
DMG7430LFGQ-13
621-DMG7430LFGQ-13
Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V 1: USD0.66
10: USD0.576
100: USD0.393
500: USD0.329
1000: USD0.28
3000: USD0.245
6000: USD0.228
9000: USD0.22
24000: USD0.211
RFQ
0

Arrow Electronics

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
V36:1790_06697821
Diodes Incorporated Trans MOSFET N-CH 30V 10.5A 8-Pin PowerDI EP T/R 100000: USD0.088
50000: USD0.0889
24000: USD0.0907
10000: USD0.0916
2000: USD0.0978
BuyNow
4000
DMG7430LFG-7
V72:2272_06697821
Diodes Incorporated Trans MOSFET N-CH 30V 10.5A 8-Pin PowerDI EP T/R 666: USD0.0988
BuyNow
666

RS

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
70438050
Diodes Incorporated MOSFET, N Channel, MOS,30V,10.5A ,PowerDI | Diodes Inc DMG7430LFG-7 25: USD0.377
250: USD0.358
1250: USD0.339
2500: USD0.32
RFQ
0

Verical

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFGQ-7
82712751
Zetex / Diodes Inc High Enhancement Mode MOSFET Automotive AEC-Q101 2000: USD0.2055
BuyNow
10000
DMG7430LFGQ-13
82712084
Zetex / Diodes Inc High Enhancement Mode MOSFET Automotive AEC-Q101 3000: USD0.2161
BuyNow
9000
DMG7430LFG-7
82019535
Zetex / Diodes Inc Trans MOSFET N-CH 30V 10.5A 8-Pin PowerDI EP T/R 100000: USD0.088
50000: USD0.0889
24000: USD0.0907
10000: USD0.0916
2000: USD0.0978
BuyNow
4000
DMG7430LFG-7
65205374
Zetex / Diodes Inc Trans MOSFET N-CH 30V 10.5A 8-Pin PowerDI EP T/R 666: USD0.0988
BuyNow
666

Bristol Electronics

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFGQ-7
Diodes Incorporated RFQ
2000

Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFGQ-7
Diodes Incorporated 501: USD0.32
126: USD0.4
1: USD0.8
BuyNow
1600

TME

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
DMG7430LFG-7
Diodes Incorporated Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8 1000: USD0.143
500: USD0.158
250: USD0.166
100: USD0.179
25: USD0.2
10: USD0.265
1: USD0.365
BuyNow
1990
DMG7430LFGQ-7
DMG7430LFGQ-7
Diodes Incorporated Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W 2000: USD0.252
1000: USD0.261
500: USD0.291
250: USD0.328
100: USD0.387
50: USD0.437
1: USD0.598
RFQ
0

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
DMG7430LFG-7
Diodes Incorporated Trans MOSFET N-CH 30V 10.5A 8-Pin PowerDI 3333-8 T/R (Alt: DMG7430LFG-7) BuyNow
140000
DMG7430LFGQ-13
DMG7430LFGQ-13
Diodes Incorporated Transistor MOSFET N-Channel 30V 8-Pin PowerDI3333 T/R (Alt: DMG7430LFGQ-13) BuyNow
3000
DMG7430LFGQ-7
DMG7430LFGQ-7
Diodes Incorporated Transistor MOSFET N-Channel 30V 8-Pin PowerDI3333 T/R (Alt: DMG7430LFGQ-7) BuyNow
2000

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFGQ-7
Diodes Incorporated 2000: USD0.2925
BuyNow
2000
DMG7430LFG-7
Diodes Incorporated MOSFET BVDSS: 25V~30V POWERDI3333-8 T&R 2K 2000: USD0.1595
128000: USD0.1476
BuyNow
128000
DMG7430LFGQ-13
Diodes Incorporated 3000: USD0.3066
BuyNow
3000

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
Diodes Incorporated RFQ
390479
DMG7430LFG-13
Diodes Incorporated RFQ
538
DMG7430LFG-7   
MFG UPON REQUEST RFQ
3360

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
Diodes Incorporated DMG7430LFG-7 RFQ
0

Vyrian

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-13
Diodes Incorporated OEM/CM Only RFQ
4000

Win Source Electronics

Part # Manufacturer Description Price BuyNow  Qty.
DMG7430LFG-7
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 225: USD0.226
540: USD0.186
835: USD0.18
1150: USD0.174
1480: USD0.169
1990: USD0.151
BuyNow
78230

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X