ECH8502 no. a1758-1/5 features ? composite type, facilitating high-density mounting ? mounting height 0.9mm ? low collector-to-emitter saturation voltage npn : v ce (sat)=0.08v(typ.)@i c =2.5a pnp : v ce (sat)= --0.12v(typ.)@i c = --2.5a ? halogen free compliance speci cations ( ): pnp absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)100 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)5 a collector current (pulse) i cp pw 1 s, duty cycle 1% (--)30 a base current i b (--)600 ma collector dissipation p c when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.6 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-007 ordering number : ena1758 70710ea tk im tc-00002428 sanyo semiconductors data sheet ECH8502 pnp/npn epitaxial planar silicon transistors gate drive applications http:// semicon.sanyo.com/en/network 1 : emitter(npn tr) 2 : base(npn tr) 3 : emitter(pnp tr) 4 : base(pnp tr) 5 : collector(pnp tr) 6 : collector(pnp tr) 7 : collector(npn tr) 8 : collector(npn tr) sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection mb lot no. 8765 1234 tl
ECH8502 no. a1758-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)50v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a dc current gain h fe v ce =(--)2v, i c =(--)500ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (260)290 mhz output capacitance cob v cb =(--)10v, f=1mhz (45)25 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)2.5a, i b =(--)125ma (--120)80 (--200)120 mv base-to-emitter saturation voltage v be (sat) i c =(--)2.5a, i b =(--)125ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (30)30 ns storage time t stg see speci ed test circuit. (180)280 ns fall time t f see speci ed test circuit. (20)25 ns note : the speci cations shown above are for each individual transistor. switching time test circuit v r r b v cc =25v v be = --5v + + 50 input vout r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =2.5a (for pnp, the polarity is reversed.) i c -- v ce [pnp] i c -- v ce [npn] collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 0 0 --1.0 --0.5 it15638 --3.0 --2.0 --4.0 --5.0 --2.5 --1.5 --3.5 --4.5 --0.1 --0.3 --0.2 --0.4 --0.5 i b =0ma --2ma --4ma --6ma --8ma --10ma --40ma --50ma --100ma --70ma --30ma --20ma it15639 0 0 1.0 0.5 3.0 2.0 4.0 5.0 2.5 1.5 3.5 4.5 0.1 0.3 0.2 0.4 0.5 i b =0ma 2ma 4ma 6ma 8ma 10ma 40ma 100ma 70ma 3 0ma 20ma 50ma
ECH8502 no. a1758-3/5 [pnp] [pnp] [pnp] h fe -- i c v ce (sat) -- i c collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a 0.01 2 3 5 7 0.1 2 3 5 7 2 3 5 7 1.0 10 0.01 2 3 5 7 0.1 2 3 5 7 2 3 5 7 1.0 10 100 2 3 5 1000 7 7 100 2 3 5 1000 7 7 it15641 ta=75 c --25 c 25 c ta=75 c --25 c 25 c v ce =0.5v [npn] it15642 v ce =2v [npn] 0 2 5 4 3 1 0 0.2 0.4 0.6 0.8 1.2 1.0 it15640 ta=75 c --25 c 25 c v ce =2v [npn] 0.01 23 57 0.1 23 57 23 57 1.0 10 100 2 3 2 3 5 7 3 5 7 10 ta=75 c -- 2 5 c 25 c it15643 i c / i b =20 [npn] i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v h fe -- i c dc current gain, h fe collector current, i c -- a ta=75 c --25 c v ce = --2v it15450 100 10 1000 7 7 2 5 3 2 5 3 7 --0.01 3 25 2 --0.1 7 37 5 --1.0 23 5 25 c v ce = --2v ta=75 c 25 c - -25 c -- 5 -- 3 -- 4 -- 1 -- 2 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 it15449 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a --0.1 23 57 23 57 23 5 --1.0 7 --0.01 5 3 2 --100 7 7 5 3 2 --10 ta=75 c 25 c --25 c it15453 i c / i b =20 h fe -- i c dc current gain, h fe collector current, i c -- a [pnp] ta=75 c --25 c v ce = --0.5v it15681 100 10 1000 7 7 2 5 3 2 5 3 7 --0.01 3 25 2 --0.1 7 37 5 --1.0 --10 23 5 25 c
ECH8502 no. a1758-4/5 [pnp] [pnp] [pnp] [pnp] v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a f t -- i c cob -- v cb collector current, i c -- a output capacitance, cob -- pf collector-to-base voltage, v cb -- v gain-bandwidth product, f t -- mhz v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a --0.1 2 3 57 2 3 57 2 3 5 --1.0 7 --0.01 7 5 3 2 --100 --1000 7 7 5 3 2 --10 ta=75 c 25 c - -25 c it15454 i c / i b =50 f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf 7 5 23 57 23 57 --0.01 --1.0 23 57 --0.1 100 3 2 5 7 3 2 v ce = --10v it15451 100 10 3 2 5 7 3 2 23 57 --1.0 --10 23 7 5 it15452 f=1mhz it15644 i c / i b =50 [npn] it15646 2 100 10 7 7 3 5 1.0 10 23 5 23 5 7 100 7 f=1mhz [npn] it15645 1.0 3 2 3 2 5 7 i c / i b =20 75 c ta= --25 c 25 c [npn] 0.01 23 57 0.1 2 3 57 2 3 57 1.0 10 0.01 23 57 0.1 23 57 23 57 1.0 10 100 2 3 2 3 5 7 7 10 ta=75 c - -25 c 25 c 0.01 23 57 23 57 23 57 0.1 1.0 10 100 5 7 2 3 5 7 2 3 it15647 v ce =10v [npn] base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c collector current, i c -- a --1.0 3 --0.1 ta= --25 c 75 c 3 2 7 5 2 23 57 23 57 23 7 5 --1.0 --0.01 i c / i b =20 it15455 25 c
ECH8502 no. a1758-5/5 ps this catalog provides information as of july, 2010. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. [pnp/npn] collector-to-emitter voltage, v ce -- v a s o collector current, i c -- a [pnp/npn] 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 0.01 23 57 23 57 23 57 23 7 5 0.01 0.1 1.0 10 it15648 500 s 1ms 10ms 100ms dc operation i cp =30a i c =5a 100 s 1 s ta=25 c single pulse for pnp, minus sign is omitted. collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c 0 1.8 1.6 1.0 1.2 1.4 1.3 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 it15457 total dissipation 1unit when mounted on ceramic substrate (900mm 2 0.8mm)
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