unisonic technologies co., ltd uk3019 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r502-311.b 2.5v drive silicon n-channel mosfet ? d escription the utc uk3019 is a silicon n-chan nel mosfet which has been designed to minimize on-state resistance while it provides rugged, reliable and fast switchi ng performance. the product is particularly suited for low voltage, low current applications such as small servo motor controller, power mosfet gate drivers, and other switching applications. ? features * min v dss =30v * r ds(on) =5 ? (v gs =4v) * r ds(on) =7 ? (v gs =2.5v) * pulsed id=400ma * low voltage drive (2.5v) ? symbol sot-23-3 1 2 3 (jedec to-236) ? ordering information pin assignment ordering number package 1 2 3 packing UK3019G-AE2-R sot-23-3 s g d tape reel ? marking
uk3019 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-311.b ? absolute maximum rating (ta=25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous i d 100 ma drain current pulsed (note 2) i dp 400 ma power dissipation (note 3) p d 200 mw junction temperature t j +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pw 10s, duty cycle 50% 3. with each pin mounted on the recommended lands. ? thermal data parameter symbol ratings unit junction to ambient ja 625 /w ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =10 a 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1.0 a gate-source leakage current i gss v ds =0v, v gs =20v 1 a on characteristics gate threshold voltage v gs(th) v ds =3v, i d =100 a 0.8 1.5 v i d = 10ma, v gs = 4v 5 8 ? static drain-source on-state resistance r ds(on) i d = 1ma, v gs = 2.5v 7 13 ? dynamic parameters input capacitance c iss 13 pf output capacitance c oss 9 pf reverse transfer capacitance c rss v ds =5v, v gs =0v, f = 1mhz 4 pf switching parameters turn-on delay time t d(on) 15 ns turn-on rise time t r 35 ns turn-off delay time t d(off) 80 ns turn-off fall-time t f v gs = 5v, v dd 5v i d = 10ma, r l = 500 ? , r g = 10 ? 80 ns
uk3019 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-311.b ? test circuits and waveforms d.u.t i d r g r l v ds v dd v gs switching time measurement circuit 90% 10% 10% 50% 90% 50% 10% 90% v ds v gs pulse width t r t d(on) t on t f t d(off) t off switching time waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
