symbol v ds v gs i dm i ar e ar t j ,t stg symbol typ max 16.7 25 40 50 r q jc 1.9 2.5 w maximumjunctiontocase b steadystate c/w thermal characteristicsparameter units maximumjunctiontoambient a t10s r q ja c/w maximumjunctiontoambient a steadystate c/w absolute maximum ratings t a =25c unless otherwise noted vv 25 gatesourcevoltage drainsourcevoltage 30 pulseddraincurrent c powerdissipation b t c =25c continuousdraincurrent g maximum units parameter t c =25c t c =100c i d 1812 40 junctionandstoragetemperaturerange a p d c 6030 55to175 t c =100c avalanchecurrent c 18 repetitiveavalancheenergyl=0.1mh c 40 a mj w t a =70c 1.6 powerdissipation a t a =25c p dsm 2.5 aod402n-channel enhancement mode field effect transistor features v ds (v)=30v i d =18a(v gs =20v) r ds(on) <15m w (v gs =20v) r ds(on) <18m w (v gs =10v) r ds(on) <44m w (v gs =4.5v) 100% uis tested! 100% rg tested! general description theaod402usesadvancedtrenchtechnologyanddesigntoprovideexcellentr ds(on) withlowgate charge.thisdeviceissuitableforuseinpwm,laodswitchingandgeneralpurposeapplications. rohscompliant halogenfree* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
aod402 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.4 3 v i d(on) 40 a 12 15 t j =125c 17.4 21 15 18 36 44 m w g fs 24 s v sd 0.8 1 v i s 18 a c iss 769 pf c oss 185 pf c rss 131 pf r g 0.7 w q g(10v) 15.9 nc q gs 2.44 nc q gd 4.92 nc t d(on) 6.2 ns t r 10.9 ns t d(off) 16 ns t f 4.8 ns t rr 18 ns q rr 8.1 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltageon state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =20v, i d =18a reverse transfer capacitance i f =18a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain currentgate-body leakage current r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage m w v gs =4.5v, i d =6a i s =18a, v gs =0v v ds =5v, i d =18a v gs =10v, i d =18a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =10v, i d =18a gate source chargegate drain charge body diode reverse recovery charge i f =18a, di/dt=100a/ m s maximum body-diode continuous currentinput capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise timeturn-off delaytime v gs =10v, v ds =15v, i d =18a, r l =0.82 w , r gen =3 w a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150c. the value in any a given application depends on the user's specific board design, and the maximum temperature fo 175c may be used if the pcb allows it.b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating.g. the maximum current rating is limited by bond-wires. *this device is guaranteed green after data code 8x11 (sep 1 st 2008). rev4: oct 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod402 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =4v 3.5v 6v7v 10v 4.5v 5v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 5.5 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 50 60 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =20v,18a v gs =10v, 18a 0 10 20 30 40 50 60 4 8 12 16 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v v gs =20v i d =18a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
aod402 typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =15v i d =18a a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
aod402 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
|
