symbol v ds v gs i dm t j , t stg symbol typ max 21 25 48 60 r jc 1 1.5 c v v 25 50 100 w gate-source voltage drain-source voltage -38 pulsed drain current c -85 -62 -120 continuous drain current g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted i d a p dsm 2.08 power dissipation b t c =25c p d t c =100c maximum junction-to-ambient a steady-state c/w w t a =70c 1.3 junction and storage temperature range -55 to 175 power dissipation a t a =25c maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w continuous drain current g t a =25c i dsm -12 t a =70c -10 AOL1401 v ds (v) = -38v i d = -85a r ds(on) < 8.5m ? (v gs = -20v) r ds(on) < 10m ? (v gs = -10v) the AOL1401 uses advanced trench technology to provide excellent rds(on), and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. it is esd protected. ultra so-8 tm top view bottom tab connected to drain d s g s g d www.freescale.net.cn 1/6 p-channel enhancement mode field general description effect transistor features
symbol min typ max units bv dss -38 v -100 t j =55c -500 1 a 10 a v gs(th) -1.5 -2.2 -3.5 v i d(on) -120 a 6.8 8.5 t j =125c 9.1 11 7.9 10 m ? g fs 50 s v sd 0.71 -1 v i s 14.5 a c iss 3800 4560 pf c oss 560 pf c rss 350 pf r g 7.5 9 ? q g (10v) 61.2 74 nc q gs 11.88 nc q gd 15.4 nc t d(on) 13.5 ns t r 17 ns t d(off) 97 ns t f 43 ns t rr 30 36 ns q rr 29 nc body diode reverse recovery time body diode reverse recovery charge i f =-20a, di/dt=100a/ s v gs =-20v, i d =-20a reverse transfer capacitance i f =-20a, di/dt=100a/ s turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v gate-body leakage current v ds =0v, v gs =25v i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage forward transconductance diode forward voltage i dss na gate threshold voltage v ds =v gs i d =-250 a v ds =-30v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current turn-off fall time switching parameters gate source charge m ? v gs =-10v, i d =-20a i s =-1a,v gs =0v v ds =-5v, i d =-20a r ds(on) static drain-source on-resistance maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-20v, f=1mhz gate drain charge total gate charge (10v) v gs =-10v, v ds =-20v, i d =-20a v gs =-10v, v ds =-20v, r l =1 ? , r gen =3 ? a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. * this device is guaranteed green after date code 8p11 (june 1 st 2008) rev 2: dec 2008 www.freescale.net.cn 2/6 AOL1401 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 4.9 6 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 6 7 8 9 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 180 210 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-20a v gs =-20v i d =-20a 0 5 10 15 20 25 30 46810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-10v v gs =-20v i d =-20a 25c 125c 0 30 60 90 120 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) -14v -10v -6v -4v vgs=-3.5v www.freescale.net.cn 3/6 AOL1401 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 4.9 6 0 2 4 6 8 10 0 10203040506070 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note b) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c rss 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 100m 10ms dc r ds(on) limited t j(max) =175c, t a =25c 1ms 10 s v ds =-20v i d =-20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c www.freescale.net.cn 4/6 AOL1401 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 4.9 6 0.001 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 30 60 90 120 0 25 50 75 100 125 150 175 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating -i d (a) 0 10 20 30 40 50 60 0.01 0.1 1 10 100 1000 pulse width (s) figure 13: single pulse power rating junction-to- ambient (note h) power (w) t a =25c www.freescale.net.cn 5/6 AOL1401 p-channel enhancement mode field effect transistor
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) www.freescale.net.cn 6/6 AOL1401 p-channel enhancement mode field effect transistor
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