? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (chip capability) 400 a i c110 t c = 110 c 190 a i lrms terminal current limit 200 a i cm t c = 25 c, 1ms 800 a ssoa v ge = 15v, t vj = 125 c, r g = 0.5 ? i cm = 400 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25 c 830 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60hz t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 600 v v ge(th) i c = 4ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 250 a t j = 125 c 2.5 ma i ges v ce = 0v, v ge = 20v 400 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.05 1.25 v i c = 400a 1.55 v ds99577b(07/09) genx3 tm 600v igbt IXGN400N60A3 v ces = 600v i c25 = 400a v ce(sat) 1.25v sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 ultra-low-vsat pt igbt for up to 5khz switching e features z optimized for low conduction losses z square rbsoa z high current capability z isolation voltage 3000 v~ z international standard package a dvantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits
ixys reserves the right to change limits, test conditions, and dimensions. IXGN400N60A3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 85 140 s c ies 32 nf c oes v ce = 25v, v ge = 0 v, f = 1mhz 1450 pf c res 66 pf q g(on) 870 nc q ge i c = 100v, v ge = 15v, v ce = 0.5 ? v ces 120 nc q gc 300 nc t d(on) 25 ns t r 95 ns t d(off) 170 ns t f 270 ns t d(on) 27 ns t r 97 ns t d(off) 190 ns t f 650 ns r thjc 0.15 c/w r thck 0.05 c/w resistive load, t j = 25 c i c = 100a, v ge = 15v v ce = 400v, r g = 0.5 ? note 1. pulse test, t 300s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 sot-227b minibloc (ixgn) resistive load, t j = 125c i c = 100a, v ge = 15v v ce = 400v, r g = 0.5 ?
? 2009 ixys corporation, all rights reserved IXGN400N60A3 fig. 1. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce - volts i c - amperes v ge = 15v 9v 7v 5v fig. 2. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce - volts i c - amperes v ge = 15v 11v 9v 7v 5v fig. 3. dependence of v ce(sat) on junction temperature 0.74 0.78 0.82 0.86 0.90 0.94 0.98 1.02 1.06 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 200a i c = 100a fig. 4. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 456789101112131415 v ge - volts v ce - volts i c = 300a 200a 100a t j = 25oc fig. 5. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc fig. 6. transconductance 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGN400N60A3 ixys ref: g_400n60a3(99)7-10-08-c fig. 7. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 900 q g - nanocoulombs v ge - volts v ce = 300v i c = 100a i g = 10ma fig. 8. reverse-bias safe operating area 0 50 100 150 200 250 300 350 400 450 100 150 200 250 300 350 400 450 500 550 600 v ce - volts i c - amperes t j = 125oc r g = 0.5 ? dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 10. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2009 ixys corporation, all rights reserved fig. 12. resistive turn-on rise time vs. collector current 50 100 150 200 250 300 350 400 450 500 100 120 140 160 180 200 220 240 260 280 300 i c - amperes t r - nanoseconds r g = 0.5 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 13. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 700 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r g - ohms t r - nanoseconds 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 300a i c = 300a, 200a, 100a fig. 14. resistive turn-off switching times vs. junction temperature 200 250 300 350 400 450 500 550 600 650 700 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 130 140 150 160 170 180 190 200 210 220 230 t d(off) - nanoseconds t f t d(off) - - - - r g = 0.5 ? , v ge = 15v v ce = 400v i c = 300a i c = 100a, 200a fig. 15. resistive turn-off switching times vs. collector current 0 100 200 300 400 500 600 700 100 120 140 160 180 200 220 240 260 280 300 i c - amperes t f - nanoseconds 140 150 160 170 180 190 200 210 t d(off) - nanoseconds t f t d(off) - - - - r g = 0.5 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 16. resistive turn-off switching times vs. gate resistance 400 450 500 550 600 650 700 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r g - ohms t f - nanoseconds 140 180 220 260 300 340 380 t d(off) - nanoseconds i c = 100a i c = 300a i c = 200a t f t d(off) - - - - t j = 125oc, v ge =15v v ce = 400v fig. 11. resistive turn-on rise time vs. junction temperature 0 50 100 150 200 250 300 350 400 450 500 550 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 0.5 ? v ge = 15v v ce = 400v i c = 300a i c = 100a i c = 200a IXGN400N60A3 ixys ref: g_400n60a3(99)7-10-08-c
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