?2002 fairchild semiconductor corporation rev. a1, august 2002 FJZ733 pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted thermal characteristics t c =25 c unless otherwise noted h fe classification & marking symbol parameter ratings units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -150 ma p c collector power dissipation 100 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -100 a, i e =0 -60 v bv ceo collector-emitter breakdown voltage i c = -10ma. i b =0 -50 v bv ebo emitter-base breakdown voltage i e = -10 a. i c =0 - 5 v i cbo collector cut-off current v cb = --60v, i e =0 -100 na i ebo emitter cut-off current v eb = -5v, i c =0 -100 na h fe dc current gain v ce = -6v, i c = -1ma 40 700 v ce (sat) collector-emitter saturation voltage i c = -100ma, i b = -10ma -0.18 -0.3 v v be (on) base-emitter on voltage v ce = -6v, i c = -1ma -0.50 -0.62 -0.80 v f t current gain bandwidth product v ce = -6v, i c = -10ma 50 180 mhz c ob output capacitance v cb = -10v, i e = 0, f=1mhz 2.8 pf nf noise figure v ce = -6v, i c = -0.3ma f=1mhz, rs=10k ? 6.0 db symbol parameter max. units r ja thermal resistance, junction to ambient 1250 c/w classification r o y g l h fe 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 marking a2 a3 a1 a4 a5 FJZ733 low frequency amplifier ? collector-base voltage : v cbo = -60v ? complement to fjz945 1. base 2. emitter 3. collector 1 2 3 sot-623f a1 marking
?2002 fairchild semiconductor corporation FJZ733 rev. a1, august 2002 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage figure 4. collector-emitter saturation voltage figure 5. base-emitter on voltage figure 6. collector output capacitance 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 i b = -400 a i b = -350 a i b = -300 a i b = -200 a i b = -150 a i b = -100 a i b = -250 a i b = -50 a i c [ma], collector current v ce [v], collector-emitter voltage -1 -10 -100 -1000 10 100 v ce =-6v ta=125 0 c ta=25 0 c ta=-25 0 c h fe , dc current gain i c [ma], collector current -1e-3 -0.01 -0.1 -1 -0.1 -1 ta=125 0 c ta=25 0 c ta=-25 0 c i c =10i b v be (sat)[v], saturation voltage i c [a], collector current -1e-3 -0.01 -0.1 -1 -0.01 -0.1 -1 ta=125 0 c ta=25 0 c ta=-25 0 c i c =10i b v ce (sat)[v], saturation voltage i c [a], collector current -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0 -20 -40 -60 -80 -100 125 0 c 25 0 c v ce =-6v -25 0 c i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 i e = 0 f = 1mhz cob [pf], capacitance v cb [v], collector-base voltage
?2002 fairchild semiconductor corporation rev. a1, august 2002 FJZ733 typical characteristics (continued) figure 7. current gain bandwidth product -1 -10 10 100 1000 v ce = -6v f t [mhz], current gain-bandwidth product i c [ma], collector current
FJZ733 package dimensions dimensions in millimeters ?2002 fairchild semiconductor corporation rev. a1, august 2002 sot-623f
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