1997. 9. 25 1/3 semiconductor technical data KTC3467 epitaxial planar npn transistor revision no : 0 high-definition crt display video output application. features high voltage : v ceo =200v. high transition frequency : f t =150mhz(typ.). low collector output capacitance : c ob =1.7pf(typ.). complementary to kta1070. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 5 v collector current dc i c 100 ma pulse i cp 200 collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =150v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 200 - - v dc current gain h fe v ce =5v, i c =10ma 70 - 240 - collector-emitter saturation voltage v ce(sat) i c =20ma, i b =2ma - - 0.6 v base-emitter saturation voltage v be(sat) i c =20ma, i b =2ma - - 1.0 v transition frequency f t v ce =30v, i c =10ma - 150 - mhz collector output capacitance c ob v cb =30v, i e =0, f=1mhz - 1.7 - pf reverse transfer capacitance c re v cb =30v, i e =0, f=1mhz - 1.2 - pf note : h fe classification 0:70 140 , y:120 240
1997. 9. 25 2/3 KTC3467 revision no : 0 0 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v h - i c collector current i (ma) 0.5 fe dc current gain h 10 collector-emitter saturation ce(sat) collector current i (ma) c v - i 246810 4 8 12 16 20 160 140 120 100 80 60 40 i =20 a b common emitter tc=25 c fe c 1 3 5 10 100 200 30 50 30 50 100 300 500 common emitter v =5v ce tc=75 c tc=25 c tc=-25 c ce(sat) c voltage v (v) c i /i =10 common emitter 0.05 50 30 200 100 10 5 3 1 0.03 0.5 0.1 0.3 0.5 1 b tc=25 c t collector current i (ma) c f - i t c transition frequency f (mhz) ce v =30v common emitter 50 30 200 100 10 5 3 1 10 0.5 30 50 100 300 500 1k tc=25 c base-emitter voltage v (v) c collector current i (ma) 0 0 be i - v cbe 0.2 0.4 0.6 0.8 1.0 20 40 60 80 100 120 ta=7 5 c ta =25 c ta=- 2 5 c common emitter v =10v ce base-emitter saturation collector current i (ma) 0.5 1 3 10 c be(sat) v - i be(sat) c voltage v (v) 30 100 200 0.3 0.5 1 3 5 10 common emitter i /i =10 ta=25 c c b
1997. 9. 25 3/3 KTC3467 revision no : 0 c p (w) 0 collector power dissipation 0 ambient temperatire ta ( c) pc - ta c - v cb collector-base voltage v (v) 0.5 1 ob 0.3 output capacitance c (pf) safe operating area ce collector-emitter voltage v (v) 510 30 100 c 2 collector current i (ma) ob cb 3 5 10 30 50 100 200 0.5 1 3 5 10 i =0 f=1mhz tc=25 c e e tc=25 c f=1mhz i =0 10 5 3 1 0.5 200 100 50 30 10 5 3 cb re reverse transfer capacitance 0.3 re 1 0.5 collector-base voltage v (v) cb c - v c (pf) 20 40 60 80 100 120 140 160 1 2 3 4 5 6 (1) tc=ta infinite heat sink (2) no heat sink (1) (2) 50 300 5 10 30 50 100 300 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max(pulsed) c c i max(continuous) * v (max) ceo 5 0 0 s 1ms 10ms dc oper atio n d c op e r at io n t a = =2 5 c tc= 25 c * * *
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