S8650 S8650 si pin photodiode has an epoxy coating window processed to have a flat surface (flatness: 5 m). when bonded to a scinti llator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between. we also accept special orders for machining flat surfaces on other ceramic package products. feel free to place an order with u s. features l flat epoxy coating surface ideal for bonding to scintillator flatness: 5 m l active area: 10 10 mm (other sizes are also available on request.) applications l scintillation x-ray detectors l calorimeters, etc. photodiode si pin photodiode flat surface ideal for bonding to scintillator absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max.100 v operating temperature topr -20 to +60 c storage temperature tstg -20 to +80 c electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm peak sensitivity wavelength p - 960 - nm = p -0.66 - a/w bgo: =480 nm -0.30 - a/w photo sensitivity s csi (tl): =540 nm -0.37 - a/w dark current i d v r =70 v - 2 6 na cut-off frequency fc =780 nm, v r =70 v r l =50 ? , -3 db -40 -mhz terminal capacitance ct v r =70 v, f=1 mhz - 40 - pf noise equivalent power nep v r =70 v, = p 3.8 10 -14 -w/hz 1/2 1
si pin photodiode S8650 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?006 hamamatsu photonics k.k. cat. no. kpin1061e02 aug. 2006 dn 0.45 lead 5.0 1.25 10 1.78 0.7 10.0 10.0 14.5 (1.4) 12.7 + 0 - 0.5 + 0 - 0.5 epoxy resin flatness: ? ? tolerance unless otherwise noted: ?.2 active area photosensitive surface white ceramic wavelength (nm) photo sensitivity (a/w) 0 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1200 1000 0.6 0.7 (typ. ta=25 ?c) reverse voltage (v) dark current 100 pa 0.1 1 10 1000 100 1 na 10 na 100 na (typ. ta=25 ?c) reverse voltage (v) (typ. ta=25 ? c, f=1 mhz) terminal capacitance 1 0.1 10 pf 100 pf 10 nf 1 nf 10 100 1000 dimensional outline (unit: mm) spectral response kpinb0254ea dark current vs. reverse voltage kpinb00255ea terminal capacitance vs. reverse voltage kpinb00256ea kpina0088ea 2
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