parameter symbol typ unit repetitive peak off-state voltages v drm v rrm 400 v average on-state current i t(av) 0.3 a rms on-state current i t(rms) 0.47 a non-repetitive peak on-state current i tsm 8.0 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c 03P4M general description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v drm v rrm 400 v average on-state current i t(av) half sine wave; t mb < 103 o c 0.3 a rms on-state current i t(rms) all conduction angles 0.47 a on-state voltage v t i t =4.0 a 2.5 v holding current i h v dm =24 v; i tm = 4.0a 5 ma latching current i l v d =6.0 v; i gt = 20 ma 0.6 6 ma gate trigger current i gt v d =6.0 v; r l = 100 15 200 ua gate trigger voltage v gt v d =6.0 v; r l = 100 0.5 0.8 v plastic silicon controlled rectifiers pnpn devices designed for high volume, linepowered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. supplied in an inexpensive plastic to-92 package which isreladily adaptable for use in automatic insertion equipment. product specification to-92 absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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