MMFTN123 MMFTN123 n n-channel logic level enhancement mode field effect transistor n-kanal logikpegel feldeffekt-transistor C anreicherungstyp n version 2011-01-24 dimensions - ma?e [mm] 1 = g 2 = s 3 = d power dissipation C verlustleistung 360 mw plastic case kunststoffgeh?use sot-23 (to-236) weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) MMFTN123 drain-source-voltage C drain-source-spannung v ds 100 v gate-source-voltage C gate-source-spannung v gss 20 v power dissipation C verlustleistung p tot 360 mw 1 ) drain current C drainstrom (dc) i d 170 ma peak drain current C drain-spitzenstrom i dm 680 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s 150c -55+150c 1 device mounted on standard pcb material bauteil montiert auf standard-leiterplattenmaterial ? diotec semiconductor ag http://www.diotec.com/ 1 2 . 5 m a x 1 . 3 0 . 1 1.1 0.4 2.9 0.1 1 2 3 type code 1.9
MMFTN123 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. drain-source breakdown voltage C drain-source-durchbruchspannung i d = 250 a v (br)dss 100 v drain-source leakage current C drain-source-leckstrom v ds = 100 v v ds = 20 v i dss 1 a 10 na gate-source leakage current C gate-source-leckstrom v gs = 2 0 v i gss 5 0 na gate-source threshold voltage C gate-source schwellspannung v gs = v ds , i d = 1 ma v gs(th) 0.8 v 2 v drain-source on-state resistance C drain-source einschaltwiderstand v gs = 10 v , i d = 170 ma v gs = 4.5 v, i d = 170 ma r ds(on) r ds(on) 6 10 input capacitance C eingangskapazit?t v ds = 25 v, f = 1 mhz c iss 73 pf output capacitance C ausgangskapazit?t v ds = 10 v, f = 1 mhz c oss 7 pf reverse transfer capacitance C rckwirkungskapazit?t v ds = 10 v, f = 1 mhz c rss 3.4 pf turn-on delay time C einschaltverz?gerung v dd = 30 v, i d = 280 ma, v gs = 10 v, r g = 6 t d(on) 3.4 ns turn-on rise time C anstiegszeit v dd = 30 v, i d = 280 ma, v gs = 10 v, r g = 6 t r 18 ns turn-off delay time C ausschaltverz?gerung v dd = 30 v, i d = 280 ma, v gs = 10 v, r g = 6 t d(off) 31 ns turn-off fall time C abfallzeit v dd = 30 v, i d = 280 ma, v gs = 10 v, r g = 6 t f 5 ns thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 500 k/w 1 ) 1 device mounted on standard pcb material bauteil montiert auf standard-leiterplattenmaterial 2 http://www.diotec.com/ ? diotec semiconductor ag
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