data brief for further information contact your local stmicroelectronics sales office. december 2011 doc id 022609 rev 1 1/4 4 STEVAL-IMR002V1 2 kw/100 v rf demonstration board for 3 t mri based on the stac4932b features output power: 2 kw supply voltage: 100 v frequency: 123 mhz power gain: 19 db efficiency: 60% rohs compliant description the STEVAL-IMR002V1 demonstration board is based on the new generation of high voltage dmos products housed in the stac ? air cavity package and capable of delivering an output power up to 1.2 kw for industrial, scientific, and medical applications such as 1.5 t and 3 t magnetic resonance imaging (mri). this new air-cavity technology now enables lower thermal resistance, lower weight, and reduced cost compared to devices in ceramic packages. the STEVAL-IMR002V1 demonstration board implements the design of a 2 kw-100 v, 123 mhz class ab peak power amplifier (ppa) for 3 tesla mri applications. it uses double push-pull bolt-down devices, two stac4932b - n-channel mosfets, capable of exceeding 2000 w @ 123 mhz with large signal gain of 19 db in class ab and a drain efficiency of 60%. it almost doubles the output power of previous amplifiers using mosfet transistors in standard ceramic packages. www.st.com
schematic circuit STEVAL-IMR002V1 2/4 doc id 022609 rev 1 1 schematic circuit figure 1. schematic diagram 0 ? 2 & |