unisonic technologies co., ltd utt25p10 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-597.b 25 a , 100v p-channel power mosfet ? description the utc utt25p10 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed and a minimum on-state resistanc e, and it can also withstand high energy in the avalanche. this utc utt25p10 is suitable for motor drivers, switching regulators, converters and relay drivers, etc. ? features * r ds(on) =0.150 ? @ v gs =-10v * high switching speed ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt25p10l-ta3-t UTT25P10G-TA3-T to-220 g d s tube utt25p10l-tn3-t utt25p10g-tn3-t to-252 g d s tube utt25p10l-tn3-r utt25p10g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
utt25p10 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-597.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (note 2) v dss -100 v drain-gate voltage (r gs =20k ? ) (note 2) v dgr -100 v gate-source voltage v gss 20 v drain current continuous i d -25 a pulsed (note 3) i dm -60 a linear derating factor 1.2 w/c power dissipation to-220 p d 150 w to-252 50 junction temperature t j -55~+150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. t j =25c ~ 150c 3. repetitive rating: pulse width limi ted by maximum junction temperature. ? thermal characteristics parameter symbol ratings unit junction to case to-220 jc 0.83 c/w to-252 2.5 ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v -100 v drain-source leakage current i dss v ds =rated bv dss , v gs =0v -1 a v ds =0.8xrated bv dss , v gs =0v , t c =125c -25 gate- source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a -2 -4 v drain to source on voltage (note 1) v ds ( on ) i d =-25a, v gs =-10v -3.75 v static drain-source on-state resistance (note 2) r ds ( on ) v gs =-10v, i d =2.5a 0.150 ? dynamic parameters input capacitance c iss v gs =0v, v ds =-25v, f=1mhz 3000 pf output capacitance c oss 1500 pf reverse transfer capacitance c rss 600 pf switching parameters turn-on delay time t d ( on ) i d 12.5a, v ds =-50v, r gs =50 ? ,v gs =-10v, r l =4.0 ? 35 50 ns rise time t r 165 250 ns turn-off delay time t d ( off ) 270 400 ns fall-time t f 165 250 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note 1) v sd i sd =-12.5a, -1.4 v note: 1. pulse test: pulse width 300s, duty cycle 2%.
utt25p10 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-597.b ? test circuits and waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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