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inchange semiconductor isc product specification isc silicon pnp power transistors bd500/b description collector-emitter sustaining voltage- : v ceo(sus) = -50v(min) -80v(min) high power dissipation applications designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit bd500 -55 v cbo collector-base voltage BD500B -85 v bd500 -50 v ceo collector-emitter voltage BD500B -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a p c collector power dissipation @ t c =25 75 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.39 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors bd500/b electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bd500 -50 v ceo(sus) collector-emitter sustaining voltage BD500B i c = -30ma ;i b = 0 b -80 v bd500 i c = -5a; i b = -0.5a b v ce (sat) collector-emitter saturation voltage BD500B i c = -3.5a; i b = -0.35a b -1.0 v bd500 i c = -5a; v ce = -4v v be( on ) base-emitter on voltage BD500B i c = -3.5a; v ce = -4v -1.6 v v cb = -55v;i e = 0 i cbo collector cutoff current v cb = -85v;i e = 0 -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -1.0 ma bd500 i c = -5a; v ce = -4v h fe dc current gain BD500B i c = -3.5a; v ce = -4v 15 90 f t current-gain?bandwidth product i c = -1.0a ; v ce = -10v 8 mhz isc website www.iscsemi.cn 2 |
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