? semiconductor components industries, llc, 2012 may, 2012 ? rev. p0 1 publication order number: NVD5890NL/d NVD5890NL product preview power mosfet 40 v, 3.7 m , 123 a, single n ? channel dpak features ? low r ds(on) to minimize conduction losses ? msl 1 @ 260 c ? 100% avalanche tested ? aec q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 40 v gate ? to ? source voltage v gs 20 v continuous drain cur- rent (r jc ) (notes 1 & 3) steady state t c = 25 c i d 123 a t c = 85 c 95 power dissipation (r jc ) (note 1) t c = 25 c p d 107 w continuous drain cur- rent (r ja ) (notes 1, 2, 3) t a = 25 c i d 24 a t a = 85 c 18.5 power dissipation (r ja ) (notes 1 & 2) t a = 25 c p d 4.0 w pulsed drain current t p =10 s t a = 25 c i dm 400 a current limited by package (note 3) t a = 25 c i dmaxpkg 100 a operating junction and storage temperature t j , t stg ? 55 to 175 c source current (body diode) i s 100 a single pulse drain ? to ? source avalanche energy (v gs = 10 v, l = 0.3 mh, i l(pk) = 40 a, r g = 25 ) e as 240 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. the entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. surface ? mounted on fr4 board using a 650 mm 2 , 2 oz. cu pad. 3. maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and suty cycle. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. case 369c dpak (bent lead) style 2 marking diagrams & pin assignment http://onsemi.com 1 2 3 4 see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information n ? channel d s g 1 gate 2 drain 3 source 4 drain yww 58 90lg y = year ww = work week 5890l = device code g = pb ? free package v (br)dss r ds(on) max i d max 40 v 3.7 m @ 10 v 123 a 5.5 m @ 4.5 v
NVD5890NL http://onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction ? to ? case (drain) r jc 1.4 c/w junction ? to ? ambient ? steady state (note 2) r ja 37 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 40 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 40 v t j = 25 c 1.0 a t j = 150 c 100 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 2.5 v negative threshold temperature coefficient v gs(th) /t j tbd mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 50 a 2.9 3.7 m v gs = 4.5 v, i d = 50 a 4.4 5.5 forward transconductance gfs v ds = 15 v, i d = 15 a tbd s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 4760 pf output capacitance c oss 580 reverse transfer capacitance c rss 385 total gate charge q g(tot) v gs = 10 v, v ds = 15 v, i d = 50 a 74 nc total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v, i d = 50 a tbd nc threshold gate charge q g(th) tbd gate ? to ? source charge q gs tbd gate ? to ? drain charge q gd tbd switching characteristics (note 5) turn ? on delay time t d(on) v gs = 10 v, v ds = 20 v, i d = 50 a, r g = 2.0 tbd ns rise time t r tbd turn ? off delay time t d(off) tbd fall time t f tbd 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperatures.
NVD5890NL http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 50 a t j = 25 c 0.9 1.2 v v gs = 0 v, i s = 20 a t j = 25 c 0.8 1.0 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 50 a tbd ns charge time ta tbd discharge time tb tbd reverse recovery charge q rr tbd nc ordering information order number package shipping ? NVD5890NLt4g dpak (pb ? free) 2500/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NVD5890NL http://onsemi.com 4 package dimensions dpak case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NVD5890NL/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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