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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1518 description high collector-emitter breakdown voltage- : v (br)ceo = 400v(min) high switching speed applications switching regulator and high voltage switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 6 a i cm collector current-pulse 10 a i b b base current-continuous 3 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1518 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 5.0 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v i cbo collector cutoff current v cb = 900v; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma h fe-1 dc current gain i c = 10ma ; v ce = 5v 8 h fe-2 dc current gain i c = 0.6a; v ce = 5v 10 40 f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 5 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 75 pf t f fall time i c = 2.5a; i b1 = 0.5a; i b2 = -1a 0.5 s isc website www.iscsemi.cn 2 |
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