2SD596 0.7a , 30v npn plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features high dc current gain complementary to 2sb624 marking dv4 package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 25 v emitter to base voltage v ebo 5 v collector current - continuous i c 700 ma collector power dissipation p c 200 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 30 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 25 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =30v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =5v, i c =0 dc current gain 1 h fe (1) 200 - 320 v ce =1v, i c =100ma h fe (2) 50 - - v ce =1v, i c =700ma collector to emitter saturation voltage 1 v ce(sat) - - 0.6 v i c =700ma, i b =70ma base to emitter saturation voltage 1 v be 0.6 - 0.7 v v ce =6v, i c =10ma transition frequency f t 170 - - mhz v ce =6v, i c =10ma collector output capacitance c ob - 12 - pf v cb =6v, i e =0, f=10mh z note: 1. pulse width Q 350 s, duty cycle Q 2%. sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3 ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50
2SD596 0.7a , 30v npn plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
2SD596 0.7a , 30v npn plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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