skt 10,3 qu zg bond. ? by semikron rev. 1 ? 19.02.2010 1 thyristor skt i t(dc) = 125 a v rrm = 1600 v size: 10,3 mm x 10,3 mm central gate skt 10,3 qu zg bond. features ? high current density due to double mesa technology ? high surge current ? compatible to thick wire bonding ? compatible to all standard solder processes typical applications* ? c onrolled rect ifier circuits ? solid state relays absolute maximum ratings symbol conditions values unit v rrm t j =25c, i r =0.2ma 1600 v v drm t j =25c, i d =0.2ma 1600 v i t(av) t c =80c, t j = 130 c 95 a i tsm t j = 130 c, 10 ms, sin 180 1250 a i 2 t t j = 130 c, 10 ms, sin 180 7810 a 2 s t jmax 130 c electrical char acteristics symbol conditions min. typ. max. unit v t t j = 130 c, i t = 105 a 1.2 v v t(to) t j = 130 c 0.85 v r t t j = 130 c 3.4 m ? i gt t j =25c 100 ma v gt t j =25c 1.98 v i gd t j = 115 c 6ma v gd t j = 130 c 0.25 v i h t j =25c 220 ma i l t j =25c 550 ma dynamic characteristics symbol conditions min. typ. max. unit t q t j = 130 c 150 s (di/dt) cr t j = 130 c 100 a/s (dv/dt) cr t j = 130 c 1000 v/s thermal characteristics symbol conditions min. typ. max. unit t j -40 130 c t stg -40 130 c t solder 255 c r th(j-c) semipack 1 assembly 0.31 k/w mechanical characteristics symbol conditions values unit raster size 10.3 x 10.3 mm 2 area total 106.1 mm 2 anode solderable (ag/ni) gate and cathode bondable (al) wire bond al,diameter 500m package tray chips / package 49 pcs
skt 10,3 qu zg bond. 2 rev. 1 ? 19.02.2010 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may not be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. t he use of semikron products in life support appliances and syste ms is subject to prior specification and written approval by semikron . we therefore strongly recommend prior consultation of our pers onal.
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