1999. 6. 24 1/2 semiconductor technical data KTB1369 epitaxial planar pnp transistor revision no : 2 high voltage application tv, monitor vertical output application driver stage application coror tv class b sound output application features high breakdown voltage : v ceo =-180v(min.) high transition frequency : f t =100mhz(typ.) high current : i c(max) =-2a. complementary to ktd2061. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) note : h fe classification o:70 140 , y:120 240 characteristic symbol rating unit collector-base voltage v cbo -200 v collector-emitter voltage v ceo -180 v emitter-base voltage v ebo -5 v collector current i c -2 a base current i b -0.2 a collector power dissipation (tc=25 1 ) p c 20 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-200v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -180 - - v dc current gain h fe v ce =-10v, i c =-400ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.0 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-10v, i c =-400ma - 100 - mhz
1999. 6. 24 2/2 KTB1369 revision no : 2 collecotr current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector power dissipation p (w) 0 c 0 case temperature ta ( c) pc - ta 10 dc current gain h fe -0.3 -0.1 -0.03 -0.01 collector current i (a) c h - i v ,v - i c collector current i (a) -0.01 -0.03 -0.1 -0.3 -0.01 be(sat) saturation voltage v ,v (v) collector current i (a) -5 collector-emitter voltage v (v) -10 -30 -100 ce c -0.1 safe operating area -10 -20 -30 -40 -50 -0.2 -0.4 -0.6 -0.8 -1.0 i =-8ma b i =-7ma b i =-6ma b i =-5ma b i =-4ma b i =-3ma b i =-2ma b i =-1ma b fe c -1 -3 -10 30 50 100 300 500 1k v =-10v ce ce(sat) be(sat) c ce(sat) -1 -3 -10 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 v be(sat) ce(sat) v i =10i c b -50 -300 -0.3 -0.5 -1 -3 -5 -10 nonrepetitive pulse tc=25 c curves must be derated unearly with increase in temperature single * t her m al limitation s/b limitation dc 1ms * 50 100 150 10 20 30 40
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