e u r o p e a n p o w e r - s e m i c o n d u c t o r a n d e l e c t r o n i c s c o m p a n y 0 1 . 0 7 . 1 9 9 8 m a r k e t i n g i n f o r m a t i o n b s m 7 5 g d 1 7 0 d l 1 1 9 9 4 . 5 1 1 8 . 1 1 1 2 3 5 1 9 6 1 2 3 . 8 1 1 5 . 2 4 5 x 1 5 . 2 4 = 7 6 . 2 1 1 0 1 9 . 0 5 3 . 8 1 4 x 1 9 . 0 5 = 7 6 . 2 9 9 . 9 1 2 1 . 5 1 . 1 5 x 1 . 0 4 1 8 7 8 9 1 1 1 0 1 7 1 6 1 5 2 0 7 8 9 1 0 5 6 4 3 c o n n e c t i o n s t o b e m a d e e x t e r n a l l y 1 2 1 2 1 2 1 4 1 3 1 1 1 9 1 7 1 5
bsm 75 gd 170 dl vorl?ufige daten h?chstzul?ssige werte / maximum rated values preliminary data elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1700 v kollektor-dauergleichstrom dc-collector current t c = 80c i c,nom. 75 a t c = 25c i c 150 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 150 a gesamt-verlustleistung total power dissipation t c = 25c, transistor p tot 625 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges 20 v dauergleichstrom dc forward current i f 75 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 150 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 1800 a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 3,4 kv charakteristische werte / characteristic values: transistor min. typ. max. kollektor-emitter s?ttigungsspannung collector-emitter saturation voltage i c = 75a, v ge = 15v, t vj = 25c v ce sat - 2,7 3,3 v i c = 75a, v ge = 15v, t vj = 125c - 3,2 - v gate-schwellenspannung gate threshold voltage i c = 3,5ma , v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies - 5 - nf kollektor-emitter reststrom collector-emitter cut-off current v ce = 1700v, v ge = 0v, t vj = 25c i ces - 0,03 0,15 ma v ce = 1700v, v ge = 0v, t vj = 125c - 2 - ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 100 na einschaltverz?gerungszeit (induktive last) turn-on delay time (inductive load) i c = 75a, v ce = 900v t d,on v ge = 15v, r g = 20 w , t vj = 25c - 0,1 - s v ge = 15v, r g = 20 w , t vj = 125c - 0,1 - s anstiegszeit (induktive last) rise time (inductive load) i c = 75a, v ce = 900v t r v ge = 15v, r g = 20 w , t vj = 25c - 0,1 - s v ge = 15v, r g = 20 w , t vj = 125c - 0,1 - s abschaltverz?gerungszeit (ind. last) turn off delay time (inductive load) i c = 75a, v ce = 900v t d,off v ge = 15v, r g = 20 w , t vj = 25c - 0,8 - s v ge = 15v, r g = 20 w , t vj = 125c - 0,9 - s fallzeit (induktive last) fall time (inductive load) i c = 75a, v ce = 900v t f v ge = 15v, r g = 20 w , t vj = 25c - 0,03 - s v ge = 15v, r g = 20 w , t vj = 125c - 0,03 - s einschaltverlustenergie pro puls turn-on energy loss per pulse i c = 75a, v ce = 900v, v ge = 15v e on r g = 20 w , t vj = 125c, l s = 60nh - 37 - mws abschaltverlustenergie pro puls turn-off energy loss per pulse i c = 75a, v ce = 900v, v ge = 15v e off r g = 20 w , t vj = 125c, l s = 60nh - 22 - mws kurzschlu?verhalten sc data t p 10sec, v ge 15v, r g = 20 w i sc t vj 125c, v cc =1000v - 300 - a v cemax =v ces -l sce x di/dt modulinduktivit?t stray inductance module l sce - 25 - nh charakteristische werte / characteristic values: diode durchla?spannung forward voltage i f = 75a, v ge = 0v, t vj = 25c v f - 2,2 2,6 v i f = 75a, v ge = 0v, t vj = 125c - 2 - v rckstromspitze peak reverse recovery current i f = 75a, - di f /dt = 1100a/sec i rm v r = 900v, v ge = -10v, t vj = 25c - 55 - a v r = 900v, v ge = -10v, t vj = 125c - 85 - a sperrverz?gerungsladung recovered charge i f = 75a, - di f /dt = 1100a/sec q r v r = 900v, v ge = -10v, t vj = 25c - 9 - as v r = 900v, v ge = -10v, t vj = 125c - 19 - as abschaltenergie pro puls reverse recovery energy i f = 75a, - di f /dt = 1100a/sec e rec v r = 900v, v ge = -10v, t vj = 25c - 3,5 - mws v r = 900v, v ge = -10v, t vj = 125c - 6,5 - mws thermische eigenschaften / thermal properties innerer w?rmewiderstand thermal resistance, junction to case transistor / transistor, dc r thjc - - 0,2 k/w diode / diode, dc - - 0,47 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro module / per module r thck d paste 50m / d grease 50m - - 0,011 k/w h?chstzul. sperrschichttemperatur max. junction temperature t vj - - 150 c betriebstemperatur operating temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 16 mm luftstrecke clearance 11 mm cti comperative tracking index 225 anzugsdrehmoment f. mech. befestigung mounting torque max. 5 nm gewicht weight g 300 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes.
b s m 7 5 g d 1 7 0 d l b s m 7 5 g d 1 7 0 d l / 1 b i l d / f i g . 1 a u s g a n g s k e n n l i n i e ( t y p i s c h ) / o u t p u t c h a r a c t e r i s t i c ( t y p i c a l ) i c = f ( v c e ) v g e = 1 5 v 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0 3 , 5 4 , 0 4 , 5 5 , 0 t j = 2 5 c t j = 1 2 5 c i c [ a ] v c e [ v ] b s m 7 5 g d 1 7 0 d l / 3 b i l d / f i g . 3 b e r t r a g u n g s c h a r a k t e r i s t i c ( t y p i s c h ) / t r a n s f e r c h a r a c t e r i s t i c ( t y p i c a l ) i c = f ( v g e ) v c e = 2 0 v 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 5 6 7 8 9 1 0 1 1 1 2 1 3 t j = 2 5 c t j = 1 2 5 c i c [ a ] v g e [ v ] b s m 7 5 g d 1 7 0 d l / 4 b i l d / f i g . 4 d u r c h l a ? k e n n l i n i e d e r i n v e r s d i o d e ( t y p i s c h ) / f o r w a r d c h a r a c t e r i s t i c o f i n v e r s e d i o d e ( t y p i c a l ) i f = f ( v f ) 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0 t j = 2 5 c t j = 1 2 5 c i f [ a ] v f [ v ] b i l d / f i g . 5 s c h a l t v e r l u s t e ( t y p i s c h ) / s w i t c h i n g l o s s e s ( t y p i c a l ) e o n = f ( i c ) , e o f f = f ( i c ) , e r e c = f ( i c ) r g o n = r g o f f = 2 0 w , v c e = 9 0 0 v , t j = 1 2 5 c b s m 7 5 g d 1 7 0 d l / 5 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 e o f f e o n e r e c e [ m j ] i c [ a ] b s m 7 5 g d 1 7 0 d l / 6 b i l d / f i g . 6 s c h a l t v e r l u s t e ( t y p i s c h ) / s w i t c h i n g l o s s e s ( t y p i c a l ) e o n = f ( r g ) , e o f f = f ( r g ) , e r e c = f ( r g ) i c = 7 5 a , v c e = 9 0 0 v , t j = 1 2 5 c 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 1 1 0 e o f f e o n e r e c e [ m j ] r g [ w ] b s m 7 5 g d 1 7 0 d l / 2 b i l d / f i g . 2 a u s g a n g s k e n n l i n i e n f e l d ( t y p i s c h ) / o u t p u t c h a r a c t e r i s t i c ( t y p i c a l ) i c = f ( v c e ) t v j = 1 2 5 c 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 3 , 0 3 , 5 4 , 0 4 , 5 5 , 0 v g e = 1 9 v v g e = 1 5 v v g e = 1 3 v v g e = 1 1 v v g e = 9 v i c [ a ] v c e [ v ]
b s m 7 5 g d 1 7 0 d l b s m 7 5 g d 1 7 0 d l / 7 b i l d / f i g . 7 s i c h e r e r a r b e i t s b e r e i c h ( r b s o a ) / r e v e r s e b i a s s a f e o p e r a t i o n a r e a ( r b s o a ) r g = 2 0 w , t v j = 1 2 5 c 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0 1 6 0 0 1 8 0 0 i c , m o d u l i c , c h i p v c e [ v ] i c [ a ]
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