CMPDM7002AHC surface mount n-channel enhancement-mode silicon mosfet description: the central semiconductor CMPDM7002AHC is a high current version of the 2n7002a enhancement- mode n-channel mosfet, designed for high speed pulsed amplifier and driver applications. marking code: 702h maximum ratings: (t a =25c) symbol units drain-source voltage v ds 60 v drain-gate voltage v dg 60 v gate-source voltage v gs 20 v continuous drain current (steady state) i d 1.0 a maximum pulsed drain current (tp=10s) i dm 5.0 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 10 a i dss v ds =60v, v gs =0 500 na bv dss v gs =0, i d =100a 63 v v gs(th) v ds =v gs , i d =250a 1.2 2.3 v v sd v gs =0, i s =500ma 0.9 v r ds(on) v gs =10v, i d =500ma 0.15 0.22 r ds(on) v gs =5.0v, i d =500ma 0.20 0.30 q g(tot) v ds =10v, v gs =4.5v, i d =1.0a 2.3 nc q gs v ds =10v, v gs =4.5v, i d =1.0a 1.0 nc q gd v ds =10v, v gs =4.5v, i d =1.0a 0.7 nc c rss v ds =25v, v gs =0, f=1.0mhz 25 pf c iss v ds =25v, v gs =0, f=1.0mhz 240 pf c oss v ds =25v, v gs =0, f=1.0mhz 50 pf t on v dd =30v, v gs =4.5v, i d =1.0a r g =6.0, r l =30 35 ns t off v dd =30v, v gs =4.5v, i d =1.0a r g =6.0, r l =30 50 ns features: ? esd protection up to 2kv ? 350mw power dissipation ? low r ds(on) : 0.22 max @ v gs =10v ? industry standard sot-23 surface mount package applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-23 case ? device is halogen free by design r2 (2-august 2011) www.centralsemi.com
CMPDM7002AHC surface mount n-channel enhancement-mode silicon mosfet pin configuration sot-23 case - mechanical outline lead code: 1) gate 2) source 3) drain marking code: 702h www.centralsemi.com r2 (2-august 2011)
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