pnp silicon high-power transistors . . . designed for use in power amplifier and switching circuits. ? low collectoremitter saturation voltage e i c = 15 adc, v ce(sat) = 1.0 vdc (max) 2n4398,99 i = 1.5 vdc (max) 2n5745 ? dc current gain specified e i = 1.0 to 30 adc ? complements to npn 2n5301, 2n5302, 2n303 ??????????????????????? ? ????????????????????? ? ??????????????????????? *maximum ratings ??????????? ??????????? rating ??? ??? symbol ???? ???? 2n4398 ??? ??? 2N4399 ???? ???? 2n5745 ??? ??? unit ??????????? collectoremitter voltage ??? v ceo ???? 40 ??? 60 ???? 80 ??? vdc ??????????? ??????????? collectorbase voltage ??? ??? v cb ???? ???? 40 ??? ??? 60 ???? ???? 80 ??? ??? vdc ??????????? ??????????? emitterbase voltage ??? ??? v eb ????????? ????????? 5.0 ??? ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous peak ??? ? ? ? ??? i c ???? ? ?? ? ???? 30 50 ??? ? ? ? ??? 30 50 ???? ? ?? ? ???? 20 50 ??? ? ? ? ??? adc ??????????? ??????????? base current e continuous peak ??? ??? i b ????????? ????????? 7.5 15 ??? ??? adc ??????????? ? ????????? ? ? ????????? ? ??????????? total device dissipation @ t a = 25 c** derate above 25 c ??? ? ? ? ? ? ? ??? p d ????????? ? ??????? ? ? ??????? ? ????????? 5.0 28.6 ??? ? ? ? ? ? ? ??? watts mw/ c ??????????? ??????????? total device dissipation @ t c = 25 c derate above 25 c ??? ??? p d ????????? ????????? 200 1.15 ??? ??? watts w/ c ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ????????? ? ??????? ? ????????? 65 to +200 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 0.875 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ????? ????? q ja ?????? ?????? 35 ??? ??? c/w * indicates jedec registered data. ** on semiconductor guarantees this data in addition to jedec registered data. ? semiconductor components industries, llc, 2001 january, 2001 rev. 8 1 publication order number: 2n4398/d 2n4347 (see 2n3442) 2n4398 2N4399 2n5745 20, 30 ampere power transistors pnp silicon 4060180 volts 200 watts case 107 to204aa (to3)
2n4398 2N4399 2n5745 http://onsemi.com 2 200 160 120 100 80 60 40 0 20 0 25 50 75 100 125 150 175 200 figure 1. powertemperature derating curve t c , case temperature ( c) p d , power dissipation (watts) safe area curves are indicated by figure 13. all limits are applicable and must be observed. 180 140 10 8.0 6.0 5.0 4.0 3.0 2.0 0 1.0 9.0 7.0 t a t c t c t a
2n4398 2N4399 2n5745 http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 200 madc, i b = 0) 2n4398 2N4399 2n5745 ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 40 60 80 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 40 vdc, i b = 0) 2n4398 (v ce = 60 vdc, i b = 0) 2N4399 (v ce = 80 vdc, i b = 0) 2n5745 ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 5.0 5.0 5.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 40 vdc, v be(off) = 1.5 vdc) 2n4398 (v ce = 60 vdc, v be(off) = 1.5 vdc) 2N4399 (v ce = 80 vdc, v be(off) = 1.5 vdc) 2n5745 (v ce = 30 vdc, v be(off) = 1.5 vdc, t c = 150 c) 2n4398, 2N4399 (v ce = 80 vdc, v be(off) = 1.5 vdc, t c = 150 c) 2n5745 ????? ? ??? ? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ? ? ? ??? e e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 5.0 5.0 5.0 10 10 ??? ? ? ? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 40 vdc, i e = 0) 2n4398 (v cb = 60 vdc, i e = 0) 2N4399 (v cb = 80 vdc, i e = 0) 2n5745 ????? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 1.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v eb = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 5.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (1) (i c = 1.0 adc, v ce = 2.0 vdc) all types (i c = 10 adc, v ce = 2.0 vdc) 2n5745 (i c = 15 adc, v ce = 2.0 vdc) 2n4398, 2N4399 (i c = 20 adc, v ce = 2.0 vdc) 2n5745 (i c = 30 adc, v ce = 4.0 vdc) 2n4398, 2N4399 ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? 40 15 15 5.0 5.0 ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? e 60 60 e e ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (1) (i c = 10 adc, i b = 1.0 adc) 2n4398, 2N4399 2n5745 (i c = 15 adc, i b = 1.5 adc) 2n4398, 2N4399 2n5745 (i c = 20 adc, i b = 2.0 adc) 2n4398, 2N4399 (i c = 20 adc, i b = 4.0 adc) 2n5745 (i c = 30 adc, i b = 6.0 adc) 2n4398, 2N4399 ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? e e e e e e e ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 0.75 1.0 1.0 1.5 2.0 2.0 4.0 ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (1) (i c = 10 adc, i b = 1.0 adc)** 2n4398, 2N4399 2n5745 (i c = 15 adc, i b = 1.5 adc) 2n4398, 2N4399 2n5745 (i c = 20 adc, i b = 2.0 adc)** 2n4398, 2N4399 (i c = 20 adc, i b = 4.0 adc) 2n5745 ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? v be(sat) ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? e e e e e e ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 1.6 1.7 1.85 2.0 2.5 2.5 ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (1) (i c = 10 adc, v ce = 2.0 vdc) 2n5745 (i c = 15 adc, v ce = 2.0 vdc) 2n4398, 2N4399 (i c = 20 adc, v ce = 4.0 vdc) 2n5745 (i c = 30 adc, v ce = 4.0 vdc) 2n4398, 2N4399 ????? ? ??? ? ? ??? ? ? ??? ? ????? v be(on) ??? ? ? ? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 1.5 1.7 2.5 3.0 ??? ? ? ? ? ? ? ? ? ? ??? vdc * indicates jedec registered data. (continued) ** on semiconductor guarantees this data in addition to jedec registered data. (1) pulse test: pulse width 300 m s, duty cycle 2.0%
2n4398 2N4399 2n5745 http://onsemi.com 4 ????????????????????????????????? ????????????????????????????????? electrical characteristics e continued ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain bandwidth product (2) (i c = 1.0 adc, v ce = 10 vdc, 2n4398, 2N4399 f = 1.0 mhz) 2n5745 ????? ? ??? ? ????? f t ??? ? ? ? ??? 4.0 2.0 ???? ? ?? ? ???? e e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 1.0 adc, v ce = 10 vdc, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 40 ???? ? ?? ? ???? e ??? ? ? ? ??? e ????????????????????????????????? ????????????????????????????????? switching characteristic ???????? ? ?????? ? ???????? rise time ???????? ? ?????? ? ???????? ???????? ? ?????? ? ???????? 2n4398, 2N4399 2n5745 ????? ? ??? ? ????? t r ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.4 1.0 ??? ? ? ? ??? m s ???????? ???????? storage time ???????? ???????? (v cc = 30 vdc, i c = 10 adc, i b1 = i b2 = 1. 0 a dc) ???????? ???????? 2n4396, 2N4399 2n5745 ????? ????? t s ??? ??? e e ???? ???? 1.5 2.0 ??? ??? m s ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? i b1 = i b2 = 1 . 0 adc) ???????? ? ?????? ? ???????? 2n4398, 2N4399 2n5746 ????? ? ??? ? ????? t f ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.6 1.0 ??? ? ? ? ??? m s (2) f t is defined as the frequency at which |h fe | extrapolates to unity. switching time equivalent test circuits figure 2. turnon time figure 3. turnoff time +2.0 v 0 -11 v 10 to 100 m s t r 20 ns duty cycle 2.0% 10 v cc -30 v 3.0 r l to scope t r 20 ns r b +9.0 v 0 3.0 r l v cc -30 v 10 r b v bb +4.0 v to scope t r 20 ns t r 20 ns 10 to 100 m s duty cycle 2.0% -11 v
2n4398 2N4399 2n5745 http://onsemi.com 5 typical aono region characteristics figure 4. dc current gain i c , collector current (amp) 3.0 0.1 0.03 2.0 1.0 0.7 0.5 0.3 0.2 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 10 30 v ce = 10 vdc v ce = 2.0 vdc h fe , dc current gain (normalized) 3.0 5.0 7.0 20 t j = 175 c -55 c 25 c v ce , collector-emitter voltage (volts) figure 5. collector saturation region i b , base current (amp) 2.0 0 0.01 1.6 1.2 0.8 0.4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 10 5.0 a i c = 2.0 a 2.0 3.0 5.0 7.0 t j = 25 c 10 a 20 a 2.0 0.03 i c , collector current (amp) 0.05 0.1 0.2 0.3 0.5 1.0 3.0 5.0 30 1.6 1.0 0.8 0.2 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 voltage (volts) figure 6. aono voltages 1.8 1.4 1.2 0.6 0.4 2.0 10 20 2.5 0.03 figure 7. temperature coefficients i c , collector current (amp) 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 30 temperature coefficients (mv/ c) 2.0 1.5 1.0 0.5 -0.5 -1.0 -1.5 -2.0 -2.5 q vb for v be * q vc for v ce(sat) *applies for i c /i b < h fe /2 0 5.0 10 20 v be @ v ce = 2.0 v
2n4398 2N4399 2n5745 http://onsemi.com 6 ratings and thermal data 100 1.0 figure 8. active region safe operating area v ce , collector-emitter voltage (volts) 50 20 10 5.0 2.0 1.0 0.5 0.1 2.0 3.0 5.0 10 20 30 100 50 0.2 i c , collector current (amp) 100 m s 1.0 ms 2n5745 2n4398, 2N4399 dc 5.0ms secondary breakdown limited bonding wire limited thermal limitations pulse duty cycle 10% t j = 200 c 2n4398 2N4399 2n5745 t c = 25 c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 8 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 200 c. t j(pk) may be calculated from the data in figure 9. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 9. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 r(t), normalized effective transient thermal resistance 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 steady state values q jc ( ) = 0.875 c/w q jc (t) = r(t) q jc ( ) d = 0.5 0.2 0.05 0.01 0 (single pulse) 0.1 design note: use of transient thermal resistance data t p p p p p t 1 1/f duty cycle, d = t 1 f - t 1 t p peak pulse power = p p a train of periodical power pulses can be represented by the model as shown in figure a. using the model and the device thermal response, the normalized effective transient thermal resistance of figure 9 was calculated for various duty cycles. to find q jc (t), multiply the value obtained from figure 9 by the steady state value q jc ( ). example: the 2n4398 is dissipating 100 watts under the following conditions: t 1 = 1.0 ms, t p = 5.0 ms. (d = 0.2) using figure 9, at a pulse width of 1.0 ms and d = 0.2, the reading of r (t) is 0.28. the peak rise in junction temperature is therefore t = r(t) x p p x q jc ( ) = 0.28 x 100 x 0.875 = 24.5 c
2n4398 2N4399 2n5745 http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h case 107 to204aa (to3) issue z
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