tsa1765 high voltage pnp epitaxial planar transistor 1/4 version: b11 sot - 223 product summary bv cbo -600v bv ceo -560v i c -150ma v ce(sat) -0.5v @ i c / i b = -50ma / -10ma features low saturation voltages high breakdown voltage ordering information part no. package packing tsa1765cw rp sot-223 2.5kpcs / 13 reel structure epitaxial planar type pnp silicon transistor absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo -600 v collector-emitter voltage v ceo -560 v emitter-base voltage v ebo -7 v collector current i c -150 ma collector current(pulse) i cp -500 base current i b -50 total power dissipation @ t c =25oc p tot 2 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit collector-base breakdown voltage i c = -1ma, i e = 0 bv cbo -600 -- -- v collector-emitter breakdown voltage i c = -1ma, i b = 0 bv ceo -560 -- -- v emitter-base breakdown voltage i e = -10ua, i c = 0 bv ebo -7 -- -- v collector cutoff current v cb = -600v, i e = 0 i cbo -- -- -100 na emitter cutoff current v eb = -7v, i c = 0 i ebo -- -- -100 na collector-emitter saturation voltage i c = -20ma, i b = -2ma v ce(sat) 1 -- -- -0.2 v i c = -50ma, i b = -10ma v ce(sat) 2 -- -- -0.5 base-emitter saturation voltage i c = -50ma, i b = -10ma v be(sat) 1 -- -- -1.0 v base-emitter on voltage v ce = -10v, i c = -50ma v be(on) -- -- -1.0 v dc current transfer ratio v ce = -10v, i c = -1ma h fe 1 150 -- -- v ce = -10v, i c = -50ma h fe 2 80 -- 300 v ce = -10v, i c = -100ma h fe 3 -- 15-- -- transition frequency v ce = -20v, i e =-10ma f t 50 -- -- mhz output capacitance v cb = -20v, f=1mhz cob -- -- 8 pf pin definition : 1. base 2. collector 3. emitter
tsa1765 high voltage pnp epitaxial planar transistor 2/4 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. vce(sat) v.s. vbe(sat figure 4. power derating figure 5. safety operation area
tsa1765 high voltage pnp epitaxial planar transistor 3/4 version: b11 sot-223 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code sot-223 dimension dim millimeters inches min max min max a 6.350 6.850 0.250 0.270 b 2.900 3.100 0.114 0.122 c 3.450 3.750 0.136 0.148 d 0.595 0.635 0.023 0.025 e 4.550 4.650 0.179 0.183 f 2.250 2.350 0.088 0.093 g 0.835 1.035 0.032 0.041 h 6.700 7.300 0.263 0.287 i 0.250 0.355 0.010 0.014 j 10 16 10 16 k 1.550 1.800 0.061 0.071
tsa1765 high voltage pnp epitaxial planar transistor 4/4 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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