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| savantic semiconductor product specification silicon npn power transistors 2SC3850 d escription with to-3pn package good linearity of h f e low collector saturation voltage applications for power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 20 a i cm collector current-peak 30 a i b base current 6 a t a =25 2.5 p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3850 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.5a ;l=25mh 400 v v cesat collector-emitter saturation voltage i c =10a ;i b =2a 1.0 v v besat base-emitter saturation voltage i c =10a ;i b =2a 1.5 v i cbo collector cut-off current v cb =500v ;i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe-1 dc current gain i c =2a ; v ce =5v 15 h fe-2 dc current gain i c =10a ; v ce =5v 10 f t transition frequency i c =1a ; v ce =10v 15 mhz switching times t on turn-on time 1.0 s t s storage time 2.5 s t f fall time i c =10a i b1 =-i b2 =2a v cc =125v 1.0 s savantic semiconductor product specification 3 silicon npn power transistors 2SC3850 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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