2007. 8. 10 1/2 semiconductor technical data kdv142el silicon epitaxial pin type diode revision no : 1 for antenna switches in mobile applications. features low capacitance : c t =0.35[pf] (max.) low series resistance : r s =1.3[ ] (max.) small package . maximum rating (ta=25 ) 1. anode 2. cathcde elp-2 b f f a i j dim millimeters a b c c d d e 2 1 2 1 e h h typ 0.36 typ 0.1 max 0.3 g j i g g 0.6 0.05 + _ 0.3 0.05 + _ 0.2 0.05 + _ 0.25 0.05 + _ 0.025 0.02 + _ 0.18 0.05 + _ 0.28 0.05 + _ electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f =10ma - - 1.0 v total capacitance c t v r =1v, f=1mhz - - 0.35 pf series resistance r s i f =10ma, f=100mhz - - 1.3 esd-capability * - c=200pf, r=0 , both forward and reverse direction 1 pulse 100 - - * failure cirterion : i r >100na at v r =30v.
2007. 8. 10 2/2 kdv142el revision no : 1 reverse current i r (a) reverse voltage v r (v) i - v rr i - v forward voltage v f (v) forward current i f (a) ff forward voltage v f (v) 0 0.2 0.4 0.6 0.8 0 0.2 0.6 0.4 0.8 1.0 0 10 1 10 2 10 3 10 4 10 5 10 -13 10 -12 10 -1 10 -4 10 -3 10 -2 10 0 10 1 10 2 10 -11 10 10 -12 10 -10 10 -8 10 -6 10 -4 10 -2 0204060 total capacitance c t (pf) 0.1 c t - v r f=1mhz f=100mhz f=100mhz 1.0 10 0.1 1.0 forward current i f (a) series resistance r s ( ? ) series resistance parallel r p ( ? ) r s - i f r p - v f forward voltage v r (v)
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