? 2007 ixys all rights reserved - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. converter - brake - inverter module (cbi ) npt igbt three phase rectifer brake chopper three phase inverter v rrm = 600 v v ces = 200 v v ces = 200 v i davm25 = 30 a i c25 = 9 a i c25 = 9 a i fsm = 300 a v ce(sat) = 2.9 v v ce(sat) = 2.9 v pin confguration see outlines. application: ac motor drives with ? input from single or three phase grid ? three phase synchronous or asynchronous motor ? electric braking operation features: ? high level of integration - only one power semiconductor module required for the whole drive ? inverter with npt igbts - low saturation voltage - positive temperature coeffcient - fast switching - short tail current ? epitaxial free wheeling diodes with hiperfast and soft reverse recovery ? industry standard package with insu lated copper base plate and soldering pins for pcb mounting ? temperature sense included package: ? ul registered ? industry standard e -pack part name (marking on product) mubw5-2a6k e72873
? 2007 ixys all rights reserved 2 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. ouput inverter t1 - t6 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 50c 200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 9 3 a a p tot total power dissipation t c = 25c 90 w v ce(sat) collector emitter saturation voltage i c = 5 a; v ge = 5 v t vj = 25c t vj = 25c 3.0 3.5 3.4 v v v ge(th) gate emitter threshold voltage i c = 0.35 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 25c .3 0.6 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 00 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = mhz 600 pf q g(on) total gate charge v ce = 600 v; v ge = 5 v; i c = 0 a 45 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 25c v ce = 600 v; i c = 0 a v ge = 5 v; r g = 82 w 50 40 290 60 .2 . ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 5 v; r g = 82 w l = 00 h; clamped induct. load t vj = 25c v cemax = v ces - l s di/dt 26 a t sc (scsoa) short circuit safe operating area v ce = 720 v; v ge = 5 v; t vj = 25c r g = 82 w ; non-repetitive 0 s r thjc thermal resistance junction to case (per igbt) .35 k/w r thch thermal resistance case to heatsink (per igbt) 0.5 k/w output inverter d1 - d6 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitve reverse voltage t vj = 50c 200 v i f25 i f80 forward current t c = 25c t c = 80c 26 7 a a v f forward voltage i f = 30 a; v ge = 0 v t vj = 25c t vj = 25c 2.3 3.4 v v i rm t rr e rec(off) max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v di f /dt = -400 a/s t vj = 00c i f = 5 a; v ge = 0 v 6 30 tbd a ns j r thjc thermal resistance junction to case (per diode) .6 k/w r thch thermal resistance case to heatsink (per diode) 0.55 k/w t c = 25c unless otherwise stated
? 2007 ixys all rights reserved 3 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. brake chopper t7 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 50c 200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 9 3 a a p tot total power dissipation t c = 25c 90 w v ce(sat) collector emitter saturation voltage i c = 5 a; v ge = 5 v t vj = 25c t vj = 25c 2.9 3.5 3.4 v v v ge(th) gate emitter threshold voltage i c = 0.4 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 25c 0.8 0.5 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 00 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = mhz 600 pf q g(on) total gate charge v ce = 600 v; v ge = 5 v; i c = 0 a 45 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 25c v ce = 600 v; i c = 0 a v ge = 5 v; r g = 82 w 45 40 290 60 .2 . ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 5 v; r g = 82 w l = 00 h; clamped induct. load t vj = 25c v cemax = v ces - l s di/dt 20 a t sc (scsoa) short circuit safe operating area v ce = 720 v; v ge = 5 v; t vj = 25c r g = 82 w ; non-repetitive 0 s r thjc thermal resistance junction to case (per igbt) .35 k/w r thch thermal resistance case to heatsink (per igbt) 0.45 k/w brake chopper d7 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitive reverse voltage t vj = 50c 200 v i f25 i f80 forward current t c = 25c t c = 80c 5 0 a a v f forward voltage i f = 5 a; v ge = 0 v t vj = 25c t vj = 25c 2.0 3.5 v v i r reverse current v r = v rrm t vj = 25c t vj = 25c 0.2 0.06 ma ma i rm t rr max. reverse recovery current reverse recovery time v r = 600 v; i f = 0 a di f /dt = -400 a/s t vj = 00c 3 0 a ns r thjc thermal resistance junction to case (per diode) 2.5 k/w r thch thermal resistance case to heatsink (per diode) 0.85 k/w t c = 25c unless otherwise stated
? 2007 ixys all rights reserved 4 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/85 resistance t c = 25c 4.45 4.7 350 5.0 k w k module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 25 50 25 c c c v isol isolation voltage i isol < ma; 50/60 hz 2500 v~ m d mounting torque (m4) 2.0 2.2 nm d s d a creep distance on surface strike distance through air 2.7 2.7 mm mm weight 40 g equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 rectifer diode d8 - d3 t vj = 25c 0.90 9 v m w v 0 r 0 igbt t - t6 t vj = 25c .50 20 v m w v 0 r 0 free wheeling diode d - d6 t vj = 25c .46 3 v m w v 0 r 0 igbt t7 t vj = 25c .50 20 v m w v 0 r 0 free wheeling diode d7 t vj = 25c .46 63 v m w i v 0 r 0 t c = 25c unless otherwise stated input rectifer bridge d8 - d13 symbol defnitions conditions maximum ratings v rrm max. repetitive reverse voltage 600 v i fav i davm i fsm average forward current max. average dc output current max. surge forward current sine 80 t c = 80c rectangular; d = / 3 ; bridge t c = 80c t = 0 ms; sine 50 hz t c = 25c 3 89 320 a a a p tot total power dissipation t c = 25c 80 w symbol conditions characteristic values min. typ. max. v f forward voltage i f = 30 a t vj = 25c t vj = 25c .0 . .35 v v i r reverse current v r = v rrm t vj = 25c t vj = 25c 0.4 0.02 ma ma r thjc thermal resistance junction to case (per diode) t vj = 25c .4 k/w r thch thermal resistance case to heatsink (per diode) 0.45 k/w
? 2007 ixys all rights reserved 5 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. ordering part name marking on product delivering mode base qty ordering code standard mubw 5-2a6k mubw5-2a6k box 0 499 33 outline drawing dimensions in mm ( mm = 0.0394) product marking
? 2007 ixys all rights reserved 6 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case fig. 4 power dissipation versus direct output current and ambient temperature, sin 80 0.001 0.01 0.1 1 0 50 100 150 200 2 3 4 5 6 7 8 9 1 10 10 2 10 3 0.0 0.6 1.2 1.8 2.4 0 20 40 60 80 0 20 40 60 80 0 40 80 120 160 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.4 0.8 1.2 1.6 i 2 t i fsm i f a v f t s t ms p tot w i d(av)m a t amb t s k/w a 2 s 0 20 40 60 80 100 120 140 0 20 40 60 80 100 i d(av) t c a v a c c z thjc t vj = 125c t vj = 25c t vj = 45c t vj = 150c 50hz, 80% v rrm t vj = 45c t vj = 150c MUBW15-12A6K r tha : 0.2 k/w 0.5 k/w 0.8 k/w 1.5 k/w 3 k/w 5 k/w 8 k/w fig. forward current versus voltage drop per diode
? 2007 ixys all rights reserved 7 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. 0 200 400 600 800 1000 0 10 20 30 40 50 0 40 80 120 160 200 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 0 10 20 30 40 50 60 0 5 10 15 20 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 v ce = 600v i c = 10a v ce v i c v ce a i c v q g -di/dt v v ge i rm t rr a/ p s mubw1012a7 i rm t rr 9 v 11 v a 11 v a 4 6 8 10 12 14 16 0 5 10 15 20 25 30 v ce = 20v v v ge a i c t vj = 25c t vj = 125c 0 1 2 3 4 0 10 20 30 40 50 v v f i f a ns nc t vj = 25c t vj = 125c t vj = 125c v r = 600 v i f = 15 a t vj = 25c 9 v 13 v 15 v v ge = 17 v 13 v 15 v v ge = 17 v t vj = 125c fig. 7 typ. output characteristics fig. 8 typ. output characteristics fig. 9 typ. transfer characteristics fig. 0 typ. forward characteristics of free wheeling diode fig. typ. turn on gate charge fig. 2 typ. turn off characteristics of free wheeling diode
? 2007 ixys all rights reserved 8 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. 0 5 10 15 20 0 1 2 3 4 0 20 40 60 80 0 5 10 15 20 0 1 2 3 4 0 100 200 300 400 0.001 0.01 0.1 1 10 0.01 0.1 1 10 0 20 40 60 80 100 120 140 0.0 0.4 0.8 1.2 0 200 400 600 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 single pulse v ce = 600v v ge = 15v r g = 82 : t vj = 125c v ce = 600v v ge = 15v i c = 10a t vj = 125c 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 r g = 82 : t vj = 125c v ce = 600v v ge = 15v r g = 82 : t vj = 125c e on v ce = 600v v ge = 15v i c = 10a t vj = 125c t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g : r g : v ce t s mj e on mj e off ns t ns t i cm k/w z thjc v a mj ns ns mj igbt diode mubw 15-12a6k fig. 3 typ. turn on energy and switching times versus collector current fig. 4 typ. turn off energy and switching times versus collector current fig. 5 typ. turn on energy and switching times versus gate resistor fig.6 typ. turn off energy and switching times versus gate resistor fig. 7 reverse biased safe operating area rbsoa fig. 8 typ. transient thermal impedance
? 2007 ixys all rights reserved 9 - 9 20073a MUBW15-12A6K ixys reserves the right to change limits, test conditions and dimensions. 0 1 2 3 4 5 6 0 5 10 15 20 25 v v ce a i c 0 1 2 3 4 0 5 10 15 20 25 30 v v f i f a 0 5 10 15 20 0 1 2 3 4 0 100 200 300 400 e off t d(off) t f i c a e off t mj ns 0 20 40 60 80 100 120 0.0 0.4 0.8 1.2 0 200 400 600 v ce = 600v v ge = 15v i c = 20a t vj = 125c e off t d(off) t f : e off t ns mj 0.001 0.01 0.1 1 10 0.01 0.1 1 10 single pulse t s k/w z thjc 0 25 50 75 100 125 150 100 1000 10000 t c : r r g v ce = 600v v ge = 15v r g = 82 : t vj = 125c MUBW15-12A6K igbt diode t vj = 25c t vj = 125c v ge = 15v t vj = 125c t vj = 25c fig. 9 typ. output characteristics fig. 20 typ. forward characteristics of free wheeling diode fig. 2 typ. turn off energy and switching times versus collector current fig. 22 typ. turn off energy and switching times versus gate resistor fig. 23 typ. transient thermal impedance fig. 24 typ. thermistor resistance versus temperature
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