document number: 91340 www.vishay.com s10-1682-rev. a, 26-jul-10 1 power mosfet IRFZ20, sihfz20 vishay siliconix features ? extremely low r ds(on) ? compact plastic package ?fast switching ? low drive current ? ease of paralleling ? excellent temperature stability ? parts per million quality ? compliant to rohs directive 2002/95/ec description the technology has expanded it s product base to serve the low voltage, very low r ds(on) mosfet transistor requirements. vishays highly efficient geometry and unique processing have been combined to create the lowest on resistance per de vice performance. in addition to this feature all have documented reliability and parts per million quality! the transistor also offer all of the well established advantages of mosfets such as voltage control, very fast switching, ease of paralleling , and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls , inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portab le equipment, etc. notes a. t j = 25 c to 150 c b. repeditive rating : pulse width limited by max. junction temperature. see transient temperature impedance curve (see fig. 11 ). c. starting t j = 25 c, l = 0.07 mh, r g = 25 ? , i as = 12 a product summary v ds (v) 50 r ds(on) ( ? )v gs = 10 v 0.10 q g (max.) (nc) 17 q gs (nc) 9.0 q gd (nc) 3.0 configuration single n-channel mosfet g d s to-220ab g d s ordering information package to-220ab lead (pb)-free IRFZ20pbf sihfz20-e3 snpb IRFZ20 sihfz20 absolute maximum ratings parameter symbol limit unit drain-source voltage a v ds 50 v gate-source voltage a v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 15 a t c = 100 c 10 pulsed drain current b i dm 60 single pulse avalanche energy c e as 5mj linear derating fa ctor (see fig. 16) 0.32 w/c maximum power dissipation (see fig. 16) t c = 25 c p d 40 w operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (peak temperatur e) for 10 s 300 (0.063" (1.6 mm) from case * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91340 2 s10-1682-rev. a, 26-jul-10 IRFZ20, sihfz20 vishay siliconix notes a. repeditive rating: pulse width limited by max. junction temperature. see transient temperature impedance curve (see fig. 5) . b. pulse test: pulse width ? 300 s; duty cycle ? 2 %. thermal resistance ratings parameter symbol typ. max. unit typical socket mount, junction-to-ambient r thja -80 c/w case-to-sink, mounting surfac e flat, smooth, and greased r thcs 1.0 - junction-to-case r thjc -3.12 electrical characteristics (t j = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 50 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 500 na zero gate voltage drain current i dss v ds > max. rating, v gs = 0 v - - 250 a v ds = max. rating x 0.8, v gs = 0 v, t c = 125 c - - 1000 on-state drain current i d(on) v gs = 10 v v ds > i d(on) x r ds(on) max. - - 15 a drain-source on-state resistance b r ds(on) v gs = 10 v i d = 10 a - 0.080 0.10 ? forward transconductance b g fs v ds > i d(on) x r ds(on) max., i d = 9.0 a 5.0 6.0 - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 11 - 560 860 pf output capacitance c oss - 250 350 reverse transfer capacitance c rss - 60 100 total gate charge q g v gs = 10 v i d = 20 a, v ds = 0.8 max. rating, see fig. 18 for test circuit (gate charge is essentially independent of operating temperature) -1217 nc gate-source charge q gs -9.0- gate-drain charge q gd -3.0- turn-on delay time t d(on) v dd = 25 v, i d = 9.0 a, z 0 = 50 ? , see fig. 5 b -1530 ns rise time t r -4590 turn-off delay time t d(off) -2040 fall time t f -1530 internal drain inductance l d modified mosfet symbol showing the internal device inductances -3.5- nh internal source inductance l s -4.5- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction rectifier --15 a pulsed diode forward current a i sm --60 body diode voltage b v sd t c = 25 c, i s = 15 a, v gs = 0 v - - 1.5 v body diode reverse recovery time t rr t j = 150 c, i f = 15 a, di f /dt = 100 a/s - 100 - ns body diode reverse recovery charge q rr -0.4-c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
document number: 91340 www.vishay.com s10-1682-rev. a, 26-jul-10 3 IRFZ20, sihfz20 vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical saturation characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature
www.vishay.com document number: 91340 4 s10-1682-rev. a, 26-jul-10 IRFZ20, sihfz20 vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area
document number: 91340 www.vishay.com s10-1682-rev. a, 26-jul-10 5 IRFZ20, sihfz20 vishay siliconix fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case vs. pulse duration fig. 12a - clamped inductive test circuit fig. 12b - unclamped inductive waveforms pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f i as v ds v dd v ds t p
www.vishay.com document number: 91340 6 s10-1682-rev. a, 26-jul-10 IRFZ20, sihfz20 vishay siliconix fig. 13 - typical transconductance vs. drain current fig. 14 - breakdown voltage vs. temperature fig. 15 - typical on-resistance vs. drain current fig. 16 - power vs. temperature derating curve fig. 17 - gate charge test circuit
document number: 91340 www.vishay.com s10-1682-rev. a, 26-jul-10 7 IRFZ20, sihfz20 vishay siliconix fig. 14 - for n-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91340 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
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