igc99 t120 t6rm edited by in fineon technologies , aim pmd d cid cls , l76 8 3 b , editi on 1 , 31 . 10 .200 7 igbt4 medium power chip this chip is used for: medium power module s features: 1200v trench + field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling applications: medium power drives g c e chip t ype v ce i cn die size package igc99 t120t6 r m 1200v 10 0 a 10.39 x 9.5 mm 2 sawn on foil mechanical parameter raster size 10.39 x 9.5 emitter pad size (incl. gate pad) 7.987 x 8.923 gate pad size 1.31 x 0.811 area total / active 98.7 / 76.1 mm 2 thic kness 120 m wafer size 150 mm flat po sition 9 0 gr d max.possible chips per wafer 140 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ? system suitable for epoxy and soft solder die bonding die bond e lectrically conduct ive glue or solder wire bond al, <500m reject ink dot s ize ? 0.65mm ; max 1.2mm recommended storage e nvironment s tore in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
igc99 t120 t6rm edited by in fineon technologies , aim pmd d cid cls , l76 8 3 b , editi on 1 , 31 . 10 .200 7 maximum ratings parameter symbol value unit c ollector - e mitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 300 a gate - e mitter voltage v ge 20 v operating junction temperature t j - 40 ... +17 5 c short circuit data 2 ) v ge = 15v, v cc = 8 00v, tvj = 150c tp 10 s reverse bias safe operating area 2 ) (rbsoa) i c max = 2 0 0 a, v ce max = 1200v, tvj max = 150c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - veri fied by design/characterization static characteristics (tested on wafer ) , t j =25 c value parameter symbol conditions min. typ. max. unit collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 3.8 ma 1200 collector - e mi tter saturation voltage v ce(sat) v ge =15v, i c =10 0 a 1. 55 1.8 2. 05 gate - e mitter threshold voltage v ge(th) i c = 3.8 ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 13 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0 v 600 na integrated gate resistor r gint 7.5 w electrical characteristics ( not subject to production test - verified by design/characterization ) value parameter symbol conditions min. typ. max. unit input capacitance c iss 6150 output capacitance c oss 405 reverse transfer capacitance c rss v ce =25v, v ge =0v, f= 1mhz 345 pf
igc99 t120 t6rm edited by in fineon technologies , aim pmd d cid cls , l76 8 3 b , editi on 1 , 31 . 10 .200 7 switching characteristics i nductive l oad ( not subject to production test - verified by design /characterization ) value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =600v, i c =10 0 a, v ge = - 15/15v, r g = --- w tbd ns 1) values also influenced by parasitic l - and c - in measurement and pack age.
igc99 t120 t6rm edited by in fineon technologies , aim pmd d cid cls , l76 8 3 b , editi on 1 , 31 . 10 .200 7 chip drawing
igc99 t120 t6rm edited by in fineon technologies , aim pmd d cid cls , l76 8 3 b , editi on 1 , 31 . 10 .200 7 fur ther electrical characteristics this chip data sheet refers to the device data sheet tbd description aql 0,65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device according to m il - std 883 test - normen villach/prffeld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stat ed herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies com ponents may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
