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  dmp2160uw document number: ds31521 rev. 3 - 2 1 of 4 www.diodes.com november 2008 ? diodes incorporated new product dmp2160uw p-channel enhancem ent mode mosfet features ? low on-resistance ? 100 m @ v gs = -4.5v ? 120 m @ v gs = -2.5v ? 160 m @ v gs = -1.8v ? very low gate threshold voltage v gs(th) 1v ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q 101 standards for high reliability mechanical data ? case: sot-323 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals connections: see diagram below ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.006 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 3) t a = 25 c t a = 70 c i d -1.5 -1.2 a pulsed drain current i dm -10 a thermal characteristics characteristic symbol value units total power dissipation (note 3) p d 350 mw thermal resistance, junction to ambient r ja 360 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. 3. device mounted on 1in 2 fr-4 pcb with 2 oz. copper. t 10 sec. sot-323 top view top view internal schematic source gate drain gs d
dmp2160uw document number: ds31521 rev. 3 - 2 2 of 4 www.diodes.com november 2008 ? diodes incorporated new product dmp2160uw electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25 c i dss ? ? -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? ? ? 100 800 na v gs = 8v, v ds = 0v v gs = 12v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) -0.4 -0.6 -0.9 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 75 90 120 100 120 160 m v gs = -4.5v, i d = -1.5a v gs = -2.5v, i d = -1.2a v gs = -1.8v, i d = -1a forward transconductance g fs ? 4 ? s v ds = -10v, i d = -1.5a diode forward voltage (note 4) v sd ? ? -1.0 v v gs = 0v, i s = -1.0a dynamic characteristics input capacitance c iss ? 627 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 64 ? pf reverse transfer capacitance c rss ? 53 ? pf notes: 4. short duration pulse test used to minimize self-heating effect. 0 2 4 6 8 10 01 2 3 45 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 3.0v gs v = 3.0v gs 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristics -v , gate source voltage (v) gs -i , d r ain c u r r en t (a) d v = -5v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ai n -s o u r c e on-resistance (normalized) ds(on) fig. 3 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j v = -4.5v i = -4.5a gs d v = -2.5v i = -2a gs d 0 200 400 600 800 1,000 1,200 04 8121620 fig. 4 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) f = 1mhz v = 0v gs c iss c oss c rss
dmp2160uw document number: ds31521 rev. 3 - 2 3 of 4 www.diodes.com november 2008 ? diodes incorporated new product dmp2160uw 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 fig. 5 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a -v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v , source-drain voltage (v) sd fig. 6 diode forward voltage vs. current -i , s o u r c e c u r r en t (a) s t = 25c a 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 fig. 7 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 338c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 ordering information (note 5) part number case packaging DMP2160UW-7 sot-323 3000/tape & reel notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d dmf = marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) dmf ym
dmp2160uw document number: ds31521 rev. 3 - 2 4 of 4 www.diodes.com november 2008 ? diodes incorporated new product dmp2160uw package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot-323 dim min max typ a 0.25 0.40 0.30 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d - - 0.65 f 0.30 0.40 0.425 g 1.20 1.40 1.30 h 1.80 2.20 2.15 j 0.0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.8 x 0.7 y 0.9 c 1.9 e 1.0 x e y c z a m j l df b c h k g top view


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Newark

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DMP2160UW-7
23T5606
Diodes Incorporated Mosfet, p Channel,20V,1.5A, sot-323; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Diodes Inc. DMP2160UW-7 BuyNow
0

DigiKey

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DMP2160UW-7
DMP2160UWDITR-ND
Diodes Incorporated MOSFET P-CH 20V 1.5A SOT-323 150000: USD0.05913
75000: USD0.06026
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60000
DMP2160UW-7
DMP2160UWDICT-ND
Diodes Incorporated MOSFET P-CH 20V 1.5A SOT-323 1000: USD0.09271
500: USD0.11912
100: USD0.1344
10: USD0.267
1: USD0.38
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DMP2160UW-7
DMP2160UWDIDKR-ND
Diodes Incorporated MOSFET P-CH 20V 1.5A SOT-323 1000: USD0.09271
500: USD0.11912
100: USD0.1344
10: USD0.267
1: USD0.38
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Avnet Americas

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DMP2160UW-7
DMP2160UW-7
Diodes Incorporated Trans MOSFET P-CH 20V 1.5A 3-Pin SOT-323 T/R - Tape and Reel (Alt: DMP2160UW-7) RFQ
0
DMP2160UW-7
DMP2160UW-7
Diodes Incorporated Trans MOSFET P-CH 20V 1.5A 3-Pin SOT-323 T/R - Tape and Reel (Alt: DMP2160UW-7) RFQ
0

Future Electronics

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DMP2160UW-7
Diodes Incorporated DMP2160UW Series 20 V 100 mOhm P-Channel Enhancement Mode Mosfet - SOT-323 75000: USD0.0592
45000: USD0.0612
15000: USD0.0636
9000: USD0.0647
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0
DMP2160UW-7
Diodes Incorporated DMP2160UW Series 20 V 100 mOhm P-Channel Enhancement Mode Mosfet - SOT-323 75000: USD0.0592
45000: USD0.0612
15000: USD0.0636
9000: USD0.0647
3000: USD0.0672
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Verical

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DMP2160UW-7
78416787
Zetex / Diodes Inc Trans MOSFET P-CH 20V 1.5A 3-Pin SOT-323 T/R 150000: USD0.0513
75000: USD0.0523
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9000: USD0.0606
6000: USD0.0617
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114000

Quest Components

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DMP2160UW-7
Diodes Incorporated 1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 186: USD0.18
22: USD0.27
1: USD0.6
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Ameya Holding Limited

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DMP2160UW-7
Diodes Incorporated DMP2160UW Series 20 V 100 mOhm P-Channel Enhancement Mode Mosfet - SOT-323 RFQ
15000

ComSIT USA

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DMP2160UW7
Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RFQ
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NexGen Digital

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Diodes Incorporated RFQ
17998

Avnet Silica

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DMP2160UW-7
DMP2160UW-7
Diodes Incorporated Trans MOSFET P-CH 20V 1.5A 3-Pin SOT-323 T/R (Alt: DMP2160UW-7) BuyNow
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Perfect Parts Corporation

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87190
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South Electronics

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Win Source Electronics

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DMP2160UW-7
Diodes Incorporated MOSFET P-CH 20V 1.5A SOT-323 1165: USD0.043
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