inchange semiconductor isc product specification isc silicon npn power transistor BUV50 description high current capability low collector saturation voltage- : v ce( sat ) = 0.8v (max.) @i c = 10a high switching speed applications designed for high current, high speed, high power applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 250 v v ceo collector-emitter voltage 125 v v ebo emitter-base voltage 7 v i c collector current-continuous 25 a i cm collector current-peak 50 a i b b base current-continuous 6 a i bm base current-peak 12 a p c collector power dissipation @t c =25 150 w t j junction temperature 175 t stg storage temperature range -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUV50 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a ; i b = 0; l= 25mh 125 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 10a; i b = 0.5a i c = 10a; i b = 0.5a;t c = 100 0.8 0.9 v v ce (sat)-2 collector-emitter saturation voltage i c = 20a ;i b = 2a i c = 20a; i b = 2a;t c = 100 0.9 1.5 v v be (sat) base-emitter saturation voltage i c = 20a ;i b = 2a i c = 20a; i b = 2a;t c = 100 1.6 1.7 v i cer collector cutoff current v ce = v cev ; r be = 10 v ce = v cev ; r be = 10 ; t c =100 1.0 5.0 ma i cev collector cutoff current v ce = v cev ; v be = -1.5v v ce = v cev ; v be = -1.5v;t c =100 1.0 5.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe dc current gain i c = 10a ; v ce = 4v 20 switching times resistive load t r rise time 0.6 s t s storage time 1.2 s t f fall time i c = 24a; i b1 = 3a; v cc = 100v v bb = -5v, r b = 0.83 ; t p = 30 s 0.3 s isc website www.iscsemi.cn
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