BFW43 v cbo collector ? base voltage v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i b = 0) i c collector current p d total device dissipation t a = 25 c p d total device dissipation t c = 25 c t stg storage temperature t j max operating junction temperature r ja thermal resistance junction to ambient r jc thermal resistance junction to case -150v -150v -6v 0.1a 0.4w 1.4w ?55 to 200c 200c 438c/w 125c/w absolute maximum ratings (t case = 25c unless otherwise stated) pnp silicon transistor features ? pnp high voltage planar transistor hermetic to18 package full screening options available mechanical data dimensions in mm (inches) semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 5989 issue 1 to?18 metal package pin 1 ? emitter underside view pin 2 ? base pin 3 ? collector 1 3 2 2.54 (0.100) nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min.
BFW43 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 5989 issue 1 (1) pulse test : pulse width < 300 s ,duty cycle < 2% parameter test conditions min. typ. max. unit. v ( br)cbo collector - base breakdown voltage (1) i c = -10 a , i e =0 -150 v v ( br)ceo collector - emitter breakdown voltage (1) i c =- 2ma , i b =0 -150 v i cbo colllector cut off current v ( br)ebo emitter - base breakdown voltage (1) i e = -10 a , i c =0 -6 v v ce(sat) collector - emitter saturation voltage (1) i c =-10ma , i b = - 1ma -0.1 -0.5 v v be(sat) base - emitter saturation voltage (1) i c =-10ma , i b = - 1ma -0.74 -0.9 v h fe dc current gain (1) i c =-1ma, v ce = -10 v i c =-10ma, v ce = -10 v i c =-10 a, v ce = -10 v t a = -55 c 40 40 85 100 30 f t current gain - bandwith product 60 mh z c ebo emitter- base capacitance v eb =-0.5 v , i e = 0 , f=1 mh z 20 25 pf c cbo collector- base capacitance v cb =-5 v , i e = 0 , f=1 mh z 5 7 pf electrical characteristics continued (t a = 25 c unless otherwise stated) v cb = -100 v , i e = 0 v cb = -100 v , i e = 0 t a =125 c -0.2 -0.03 -10 -10 na a i c =-1ma ,v ce =-10 v , f=20 mh z i c =-10ma 50
|
