053-4205 rev f 2-2010 product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular to-220 package ? low forward voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters -inverters ? snubber diode ? pfc ultrafast soft recovery rectifier diode 600v 15a apt15dq60k APT15DQ60KG* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings: t c = 25c unless otherwise speci ed. static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.0 2.4 2.5 1.56 25 500 25 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 15a i f = 30a i f = 15a, t j = 125c v r = 600v v r = 600v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 129c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range lead temperature for 10 sec. symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg t l unit volts amps mj c apt15dq60k(g) 600 15 30 110 20 -55 to 175 300 1 - cathode 2 - anode back of case - cathode 1 2 microsemi website - http://www.microsemi.com 1 2 (k)
apt15dq60k(g) dynamic characteristics 053-4205 rev f 2-2010 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: thermal and mechanical characteristics min typ max - 15 - 19 - 21 - 2 - - 105 - 250 - 5 - - 55 - 420 - 15 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c d = 0.9 characteristic / test conditions junction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max 1.35 0.07 1.2 10 1.1 unit c/w oz g lb?in n?m microsemi reserves the right to change, without notice, the speci cations and information contained herein.
053-4205 rev f 2-2010 apt15dq60k(g) typical performance curves t j =125 c v r =400v 7.5a 15a 30a t j = -55 c t j = 25 c t j = 125 c t j = 175 c duty cycle = 0.5 t j =175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 35 30 25 20 15 10 5 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetempera ture v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j =125 c v r =400v 30a 7.5a 15a 60 50 40 30 20 10 0 700 600 500 400 300 200 100 0 140 120 100 80 60 40 20 0 25 20 15 10 5 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of chan ge -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of cha nge 0 1 2 3 4 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 t j =125 c v r =400v 30a 15a 7.5a q rr t rr t rr q rr i rrm 1.2 1.0 0.8 0.6 0.4 0.2 0.0 90 80 70 60 50 40 30 20 10 0
apt15dq60k(g) 053-4205 rev f 2-2010 apt6017lll 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform to-220 (k) package outline e3 100% sn microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. anode cathode cathode 0.404 [10.26] 0.393 [9.98] ?0.153 [3.89] ?0.149 [3.78] 0.114 [2.90] 0.102 [2.59] 0.508 [12.90] 0.492 [12.50] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.100 [2.54] typ 0.204 [5.18] 0.196 [4.98] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] 0.362 [9.19] 0.354 [8.99] 0.110 [2.79] 0.099 [2.51] 0.018 [0.46] 0.014 [0.36]
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