4v drive nch + pch mosfet SH8M14 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package(sop8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 SH8M14 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ?20 ? 20 v continuous i d ?9 ?7a pulsed i dp ?36 ? 28 a continuous i s 1.6 ? 1.6 a pulsed i sp 36 ? 28 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. power dissipation p d symbol type source current (body diode) drain current parameter 2.0 ? 55 to ? 150 unit limits 1.4 150 *1 *2 *1 sop8 (1) (8) (5) (4) (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode ?2 ?1 ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) 1/10 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
SH8M14 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -1521 i d =9a, v gs =10v -1825 i d =9a, v gs =4.5v 20 28 i d =9a, v gs =4v forward transfer admittance l y fs l 5.0 - - s v ds =10v, i d =9a input capacitance c iss - 630 - pf v ds =10v output capacitance c oss - 230 - pf v gs =0v reverse transfer capacitance c rss - 110 - pf f=1mhz turn-on delay time t d(on) - 10 - ns i d =4.5a, v dd 15v rise time t r - 33 - ns v gs =10v turn-off delay time t d(off) - 42 - ns r l =3.3 ? fall time t f - 10 - ns r g =10 ? total gate charge q g - 8.5 - nc i d =9a, v dd 15v gate-source charge q gs - 2.3 - nc v gs =5v gate-drain charge q gd - 4.0 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =9a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) m ? * * * * * * * * * * 2/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma - 21.5 29.0 i d = ? 7a, v gs = ? 10v - 29.0 39.0 i d = ? 3.5a, v gs = ? 4.5v - 31.0 40.8 i d = ? 3.5a, v gs = ? 4.0v forward transfer admittance l y fs l 6.0 - - s v ds = ? 10v, i d = ? 7a input capacitance c iss - 1200 - pf v ds = ? 10v output capacitance c oss - 170 - pf v gs =0v reverse transfer capacitance c rss - 170 - pf f=1mhz turn-on delay time t d(on) - 12 - ns i d = ? 3.5a, v dd ? 15v rise time t r - 40 - ns v gs = ? 10v turn-off delay time t d(off) - 80 - ns r l =4.27 ? fall time t f - 65 - ns r g =10 ? total gate charge q g - 18 - nc i d = ? 7a, v dd ? 15v gate-source charge q gs - 3.5 - nc v gs = ? 5v gate-drain charge q gd - 6.5 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 7a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * * * * * * * 3/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 1 2 3 4 5 6 7 8 9 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v t a =25 c pulsed 0 1 2 3 4 5 6 7 8 9 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 4/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : is [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 10 20 30 40 50 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =9.0a i d =4.5a t a =25 c pulsed 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 15v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =15v i d =9a pulsed 5/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c/ w rth (ch - a) (t)=r(t) rth (ch - a) 6/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 tr.2(pch) 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 v gs = - 2.5v v gs = - 10v v gs = - 4.5v v gs = - 4.0v v gs = - 3.0v t a =25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 1 2 3 4 5 6 7 0 2 4 6 8 10 v gs = - 2.5v v gs = - 3.0v v gs = - 10v v gs = - 4.5v v gs = - 4.0v t a =25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 100 0 1 2 3 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 1 10 100 1000 0.1 1 10 v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 7/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 1 10 100 1000 0.1 1 10 v gs = - 4.0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.01 0.1 1 10 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : - i s [a] source - drain voltage : - v sd [v] 0 20 40 60 80 100 0 5 10 15 i d = - 7.0a i d = - 3.5a t a =25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd = - 15v v gs = - 10v r g =10 w pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : - i d [a] 0 2 4 6 8 10 0 10 20 30 t a =25 c v dd = - 15v i d = - 7.0a r g =10 w pulsed fig.12 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 8/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 10 100 1000 10000 0.01 0.1 1 10 100 c iss c oss c rss t a =25 c f=1mhz v gs =0v fig.13 typical capacitance vs. drain - source voltage drain - source voltage : - v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs = - 10v) p w =100us p w =1ms t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) fig.14 maximum safe operating aera drain - source voltage : - v ds [v] drain current : - i d (a) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c/ w rth (ch - a) (t)=r(t) rth (ch - a) fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 9/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M14 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.3-1 switching time measurement circuit fig.3-2 switching waveforms fig.4-1 gate charge measurement circuit fig.4-2 gate charge waveform 10/10 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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