pt60qhx45 1/6 applications l pulse power l crowbars l ignitron replacement features l double side cooling l fast turn-on l low turn-on losses voltage ratings key parameters v drm 4500v i t(av) 1000a i tsm 22500a di/dt 10,000a/ m s outline type code: h. see package details for further information. pt60qhx45 conditions t vj = 0? to 125?c, i drm = i rrm = 100ma, v drm , v rrm t p = 10ms lower voltage grades available. type number repetitive peak voltages v drm /v rrm v current ratings symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value unitsmax. half wave resistive load, t case = 80 o c 1000 a t case = 80 o c 1570 a 4500/16 fig.1 package outline pt60qhx45 pu lse p ow er thyristor switch preliminary information replaces february 2000 version, ds5267-1.3 ds5267-1.4 april 2000
pt60qhx45 2/6 clamping force 19.5kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.003 double side - o c/w surge ratings conditions 10ms half sine; t case = 125 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 125 o c v r = 0 max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing i tsm surge (non-repetitive) on-state current i 2 t i 2 t for fusing 2.52 x 10 6 a 2 s 22.5 ka 15.8 x 10 6 a 2 s 17.8 ka thermal and mechanical data dc conditions min. max. units 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) - thermal resistance - junction to case r th(j-c) symbol parameter clamping force 18 22 kn C55 125 o c - on-state (conducting) - 135 o c double side cooled - 0.013 o c/w dynamic characteristics parameter symbol conditions typ. max. units i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c from 67% v drm to 40ka gate source 60a t r = 1.5 m s to 1a, t j = 25 o c dv/dt maximum linear rate of rise of off-state voltage to 67% v drm t j = 125 o c. r gk 1.5 w - 100 ma - 175 v/ m s non-repetitive - 10000 a/ m s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c 1.5 -v - 0.67 m w gate trigger characteristics and ratings v drm = 5v, t case = 25 o c conditions parameter symbol v gt gate trigger voltage v drm = 5v, t case = 25 o c i gt gate trigger current 1.0 v 3a max. units - - typ.
pt60qhx45 3/6 curves fig.2 maximum (limit) on-state characteristics ordering information pt pulse power thyristor 40q device type p package outline type code x lead length (see table, right) 45 voltage x100 lead length (x) o c d e f g h j k l no lead 8" 10" 12" 16" 18" 20" 24" 30" 40" 200mm 250mm 300mm 400mm 450mm 500mm 600mm 750mm 1000mm 1.0 2.0 3.0 4.0 5.0 instantaneous on-state voltage, v t - (v) 0 1000 2000 3000 4000 5000 measured under pulse conditions instantaneous on-state current, i t - (a) 1 2 1: t j = 25?c max 2: t j = 125?c max
pt60qhx45 4/6 10 1 0.1 0.01 0.001 time - (s) 0.1 0.01 0.001 0.0001 thermal impedance - (?c/w) conduction d.c. halfwave 3 phase 120? 6 phase 60? effective thermal resistance junction to case ?c/w double side 0.0130 0.0141 0.0170 0.0200 double side cooled 100 fig.3 maximum (limit) transient thermal impedance - junction to case
pt60qhx45 5/6 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwi se. do not scale. 2 holes 3.60 0.05 x 2.0 0.1 deep (one in each electrode) 26 0.5 52 55 9.6 15? cathode aux. tube gate tube cathode anode 62.85 100 62.85 nominal weight: 820g clamping force: 20kn 10% package outine type code: h
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2002 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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