2sK3093LS no.8622-1/3 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en8622 n0806qb sy im tc-00000312 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors data sheet 2sK3093LS n-channel silicon mosfet general-purpose switching device applications features ? low on-resistance. ? low qg. ? ultrahigh-speed switching applications. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 400 v gate-to-source voltage v gss 30 v drain current (dc) i d 3a drain current (pulse) i dp pw 10 m s, duty cycle 1% 12 a allowable power dissipation p d 2.0 w tc=25 c20w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche enargy (single pulse) *1 e as 51.4 mj avalanche current *2 i av 3a * 1 v dd =50v, l=10mh, i av =3a * 2 l 10mh, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 400 v zero-gate voltage drain current i dss v ds =320v, v gs =0v 1.0 m a gate-to-source leakage current i gss v gs = 30v, v ds =0v 100 n a cutoff voltage v gs (off) v ds =10v, i d =1ma 3.0 4.0 v forward transfer admittance ? yfs ? v ds =10v, i d =1.5a 0.7 1.4 s static drain-to-source on-state resistance r ds (on) i d =1.5a, v gs =15v 1.8 2.3 w marking : k3093 continued on next page. www.datasheet.co.kr datasheet pdf - http://www..net/
2sK3093LS no.8622-2/3 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =20v, f=1mhz 360 pf output capacitance coss v ds =20v, f=1mhz 90 pf reverse transfer capacitance crss v ds =20v, f=1mhz 45 pf turn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 10 ns turn-off delay time t d (off) see specified test circuit. 28 ns fall time t f see specified test circuit. 17 ns total gate charge qg v ds =200v, v gs =10v, i d =3a 10 nc diode forward voltage v sd i s =3a, v gs =0v 0.85 1.2 v note : be careful in handling the 2sK3093LS because it has no protection diode between gate and source. package dimensions unit : mm (typ) 7509-002 switching time test circuit avalanche resistance test circuit 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : gate 2 : drain 3 : source sanyo : to-220fi(ls) pw=10 m s d.c. 0.5% p. g r gs 50 w g s d i d =1.5a r l =133 w v dd =200v v gs =15v v out 2sK3093LS 50 w 3 50 w dut v dd l 15v 0v www.datasheet.co.kr datasheet pdf - http://www..net/
2sK3093LS no.8622-3/3 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of november, 2006. specifications and information herein are subject to change without notice. note on usage : since the 2sK3093LS is a mosfet product, please avoid using this device in the vicinity of highly charged objects. 10 1.0 23 57 23 57 2 100 357 0 0 0 20 40 25 2.5 2.0 1.5 1.0 0.5 20 15 10 5 60 80 100 120 140 160 160 140 120 100 80 60 40 20 0 it11694 it11693 it11692 0.01 0.1 2 3 2 3 5 7 2 1.0 3 5 7 2 i d =3a <10 m s dc operation 100ms 10ms 1ms 10 m s 100 m s i dp =12a operation in this area is limited by r ds (on). 10 3 5 7 case temperature, tc -- c ambient temperature, ta -- c p d -- tc p d -- ta allowable power dissipation, p d -- w allowable power dissipation, p d -- w a s o drain-to-source voltage, v ds -- v drain current, i d -- a tc=25 c single pulse 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c www.datasheet.co.kr datasheet pdf - http://www..net/
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