features ? over temperature shutdown ? over current shutdown ? active clamp ? low current & logic level input ? e.s.d protection IPS0551T fully protected power mosfet switch data sheet no. pd60160-c package product summary typical connection description the IPS0551T is a fully protected three termi nal smart power mosfet that features over-current, over-tem- perature, esd protection, and drain to source active clamp. this device combines a hexfet ? power mosfet and a gate driver. it offers full protection and high reliability required in harsh environments. the driver allows short switching times and provides efficient protec- tion by turning off the power mosfet when temperature exceeds 165 o c or when the drain current reaches 100a. the device restarts once the input is cycled. the ava- lanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetiza- tions. r ds(on) 6.0m ? (max) v clamp 40v i shutdown 100a t on / t off 4 s super to220 l oad r in series ( if needed ) logic signal in d control s www.irf.com 1 (please refer to lead assignment for correct pin configuration)
IPS0551T 2 www.irf.com (1) limited by junction temperature (pulsed current limited also by internal wiring) (2) operation at higher switching frequencies is possible. see appl. notes. absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are referenced to source lead. (t ambient = 25 o c unless otherwise specified). pcb mounting uses the standard foot- print with 70 m copper thickness. symbol parameter min. max. units test conditions v ds maximum drain to source voltage ? 37 v in maximum input v oltage -0.3 7 i+ in maximum in current -10 +10 ma i sd cont. diode max. continuous current (1) (rth=60 o c/w) ? 2.8 (rth=5 o c/w) ? 35 i sd pulsed diode max. pulsed current (1) ? 100 p d maximum power dissipation (1) (rth=60 o c/w) ? 2 w esd1 electrostatic discharge v oltage (human body) ? 4 c=100pf, r=1500 ?, esd2 electrostatic discharge voltage (machine model) ? 0.5 c=200pf, r=0 ?, l=10 h t stor. max. storage temperature -55 150 t j max. max. junction temperature -40 +150 t lead lead temperature (soldering, 10 seconds) ? 300 v a kv symbol parameter min. typ. max. units test conditions r th 1 thermal resistance free air ? 60 ? r th 2 thermal resistance to pcb min footprint ? 60 ? r th 3 thermal resistance to pcb 1" sq. footprint ? 35 ? r th 4 thermal resistance junction to case ? 0.7 thermal characteristics o c/w recommended operating conditions these values are given for a quick design. for operation outside these conditions, please consult the application notes. symbol parameter min. max. units v ds (max) continuous drain to source voltage ? 18 v ih high level input voltage 4 6 v il low level input voltage 0 0.5 i ds continuous drain current tamb=85 o c ( tambient = 85 o c, in = 5v, rth = 80 o c/w, tj = 125 o c) ? 8 ( tambient = 85 o c, in = 5v, rth = 5 o c/w, tj = 125 o c) ? 35 r in recommended resistor in series with in pin 0.1 0.5 k ? t r-in (max) max recommended rise time for in signal (see fig. 2) ? 1 s f r -i sc (2) max. frequency in short circuit condition (vcc = 14v) 0 1 khz v a o c
IPS0551T www.irf.com 3 symbol parameter min. typ. max. units test condition s t sd over temperature threshold ? 165 ? o c see fig. 1 i sd over current threshold 60 100 150 a see fig. 1 v reset in protection reset threshold 1.5 1.9 2.8 v t reset time to reset protection 2 10 40 s v in = 0v, tj = 25 o c eoi_ot short circuit energy (cf application note) 100 400 1200 j v cc = 14v protection characteristics symbol parameter min. typ. m ax. units test conditions r ds(on) on state resistance t j = 25 o c ? 4.5 6.0 @tj=25 o c r ds(on) on state resistance t j = 150 o c ? 7.5 8.8 @tj=150 o c idss drain to source leakage current 0 0.01 25 a vcc = 14v, tj = 25 o c @tj=25 o c v clamp 1 drain to source clamp voltage 1 37 40 ? i d = 20ma (see fig.3 & 4) v clamp 2 drain to source clamp voltage 2 ? 43 48 v sd body diode forward voltage ? 0.85 1i d = 35a, v in = 0v v in clamp in to source clamp voltage 7 8.0 9.5 i in = 1 ma v th in threshold voltage 1.0 1.8 2.2 i d = 50ma , vds = 14v i in , on input supply current (normal operation) 25 90 300 v in = 5v i in, off input supply current (protection mode) 50 130 400 v in = 5v over-current triggered static electrical characteristics (t j = 25 o c and vcc = 14v unless otherwise specified. standard footprint 70 m of copper thickness) i=35a -t<100us v a switching electrical characteristics v cc = 14v, resistive load = 0.4 ? , rinput = 50 ?, 100 s pulse, t j = 25 o c, (unless otherwise specified). symbol parameter min. typ. max. units t est conditions t on turn-on delay time 0.25 1 4 t r rise time 0.25 14 t rf time to 130% final r ds(on) ?15? t off turn-off delay time 1.5 4 8 t f fall time 0.5 2 5 q in total gate charge ? 200 ? nc v in = 5v see figure 2 see figure 2 s m ? v in = 5v, i ds = 10a
IPS0551T 4 www.irf.com lead assignments super to220 1 2 3 in d s functional block diagram all values are typical in drain source 8v 80 a 37 v i sense 100 k ? 200 ? s q r q t > 165c i > isd
IPS0551T www.irf.com 5 14 v in d s 5 v 0 v l r + - vds ids vin v load rem : v load is negative during demagnetization figure 4 - active clamp test circuit figure 3 - active clamp waveforms ids vds vin t clam p vds clam p ( vcc ) ( see appl . notes to evaluate power dissipation ) figure 1 - timing diagram tr-in 10 % 90 % 90 % 10 % td on td off tf tr ids tr-in vin vds figure 2 - in rise time & switching time definitions tsd (165 c) vin ids isd i shutdown t t shutdown t < t reset t > t reset 5 v 0 v
IPS0551T 6 www.irf.com all curves are typical values with standard footprint. operating in the shaded area is not recommended. figure 6 - normalised rds (on) (%) vs t j ( o c) figure 5 - rds (on) (m ? ) vs input voltage (v) figure 8 - turn-off delay time & fall time (us) vs input voltage (v) figure 7 - turn-on delay time, rise time & time to 130% final rds(on) (us) vs input voltage (v) 0 1 2 3 4 5 6 7 8 9 10 11 12 012345678 tj = 150 o c tj = 25 o c 0 5 10 15 20 25 30 35 40 012345678 toff delay fall tim e 0 5 10 15 20 25 30 35 40 012345678 ton delay rise time 130% r dson 0% 20% 40% 60% 80% 100% 120% 140% 160% 180% 200% -50 -25 0 25 50 75 100 125 150 175
IPS0551T www.irf.com 7 figure 9 - turn-on delay time, rise time & time to 130% final rds(on) (us) vs in resistor ( ? ) figure 10 - turn-off delay time & fall time (us) vs in resistor ( ? ) 1 10 100 10 100 1000 delay off fall time 1 10 100 delay on rise time 130% rdson 10 100 1000 figure 12 - over-current (a) vs temperature ( o c) figure 11 - current iim. & ishutdown (a) vs vin (v) 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0123456789 is d 25c ilim 25c
IPS0551T 8 www.irf.com figure 15 - iclamp (a) vs inductive load (mh) figure 16 - transient thermal imped. ( o c/w) vs time (s) figure 13 - max.cont. ids (a) vs amb. temperature ( o c) 0 10 20 30 40 50 60 70 80 90 100 -50 0 50 100 150 200 r t h = 1 c /w (cas e t o ambient ) rth = 5c/w rth = 15c/w rth = 30c/w: 1'' footprint r t h= 6 0c/w: s t d. f o o t pr int figure 14 - ids (a) vs protection resp. time (s) 1 10 100 1000 t=25c free air/ std. footprint t=100c free air/ std. footprint current path capability should be above this curve load characteristic should be below this curve 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.00e+02 rth free air / std. fooprint rth 1 inch2 footprint rth infinite heatsink single pulse 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 single pulse 10 hz rth=60c/w dt=25c 100hz rth=60c/w dt=25c
IPS0551T www.irf.com 9 0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150 iin,on iin,off 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 treset rise time fall time figure 17 - inputcurrent ( a) vs junction ( o c) figure 18 - turn-on, turn-off and treset ( s) vs tj ( o c) 80% 85% 90% 95% 100% 105% 110% 115% 120% -50 -25 0 25 50 75 100 125 150 vds clamp @ isd vin clamp @ 10ma figure 19 - vin clamp1 & vin clamp2 (%) vs tj ( o c)
IPS0551T 10 www.irf.com case outline super to220 01-3073 02 4.00 [.157] 3.50 [.138] 14.50 [.570] 13.00 [.512] 1.30 [.051] 0.90 [.036] 2.55 [.100] 2x 15.00 [.590] 14.00 [.552] 11.00 [.433] 10.00 [.394] 1.50 [.059] 0.50 [.020] a 123 3x 0.25 [.010] b a 3.00 [.118] 2.50 [.099] 1.00 [.039] 0.70 [.028] 5.00 [.196] 4.00 [.158] b 4x 4 9.00 [.354] 8.00 [.315] 13.50 [.531] 12.50 [.493] 0.25 [.010] b a 1. dimensioning & t olerancing per asme y14.5m-1994. 2 . cont r ol l i ng di me ns i on: mi l l i me t e r . 3. dimens ions are s hown in millimet ers [inches ]. os 4 . ou t l i ne conf or ms t o j e de c ou t l i ne t o-2 7 3aa. lead assignments 2 - drain 1 - gat e mos f e t 4 - drain 3 - s ource 4 - collector 3 - emit t er 2 - collector 1 - gat e igbt ir world headquarters: 233 kansas street, el segundo, california 90245 tel: (310) 252-7105 data and specifications subject to change without notice. 6/21/2002
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