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  n-channel enhancement mode vertical dmos fet issue 1 C february 95 features * 60 volt v ds *r ds(on) = 0.33 w * repetitive avalanche rating applications * solenoids / relay drivers for automotive * stepper motor drivers * dc-dc convertors absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 1.1 a practical continuous drain current at t amb =25c i dp 1.3 a pulsed drain current i dm 15 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 850 mw practical power dissipation at t amb =25c* p totp 1.13 w avalanche current-repetitive i ar 1a avalanche energy-repetitive e ar 25 mj operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum e-line to92 compatible ZVN4306AV d g s
ZVN4306AV electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v i d =1ma, v ds =v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 12 a v ds =10v, v gs =10v static drain-source on-state resistance (1) r ds(on) 0.22 0.32 0.33 0.45 w w v gs =10v,i d =3a v gs =5v, i d =1.5a forward transconductance (1)(2) g fs 700 ms v ds =25v,i d =3a input capacitance (2) c iss 350 pf common source output capacitance (2) c oss 140 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 30 pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, v gen =10v, i d =3a rise time (2)(3) t r 25 ns turn-off delay time (2)(3) t d(off) 30 ns fall time (2)(3) t f 16 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator
typical characteristics saturation characteristics v ds - drain source voltage (volts) 012345678910 i d - drain current (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r ds( o n) a n d v gs(th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rc e r esi s ta n c e r d s ( o n ) gate threshold voltage v gs(th) i d= 3a v gs= 10v i d= 1ma v gs= v ds 2.6 225 0 4 1 2 7 6 5 3 10 9 8 10v 8v 9v 7v 5v 4v 6v 3.5v v gs= 20v 12v on-resistance v drain current i d- drain current (amps) r ds(on) -drain source on resistance ( w ) 0.1 10 100 3.5v 5v v gs =3v 6v 0.1 10 1.0 1 10v 3v 12 11 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacitance (pf) c oss c iss c rss 01020 304050607080 0 300 200 100 400 500 q-charge (nc) v g s -gate source voltage (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v dd = 20v i d= 3a 40v 60v 123 456789 101112 transconductance v drain current i d(on) - drain current (amps ) g f s -t ransconductance (s) 02 4 6810 v ds= 10v 0 1 2 4 3 5 12 14 16 18 20 8v ZVN4306AV
thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZVN4306AV derating curve t -temperature (c) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) -40 0.50 0.25 1.0 0.75 -20 0 20 40 60 80 100 120 160 140 ambient temperature 0.0001 50 150 100 10 100 1 0.1 0.01 t 1 t p d=t 1 /t p d.c. d=0.6 d=0.2 d=0.1 0.001 0 d=0.05 maximum repetitive avalanche energy v junction temperature. 0 25 50 75 100 125 150 0 5 10 15 20 25 t j - junction temperature (c) 0 150 125 100 75 50 25 0 0.2 0.4 0.6 0.8 1.0 maximum repetitive avalanche current v junction temperature single pulse t j - junction temperature (c) note: unclamped inductive test l=43mh, vcc=12v note: unclamped inductive test l=43mh, vcc=12v zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161-627 5105 (sales), (44)161-627 4963 (general enquiries) fax: (44)161-627 5467 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service.


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Price & Availability of ZVN4306AV
Newark

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
29AK9115
Diodes Incorporated Mosfet, N-Ch, 60V, 1.1A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVN4306AV 1000: USD0.729
500: USD0.894
250: USD0.976
100: USD1.06
50: USD1.15
25: USD1.26
10: USD1.36
1: USD1.66
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3954
ZVN4306AV.
61AC2987
Diodes Incorporated Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:850Mw; No. Of Pins:3Pins Rohs Compliant: No |Diodes Inc. ZVN4306AV. 1000: USD0.73
BuyNow
0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
ZVN4306AV-ND
Diodes Incorporated MOSFET N-CH 60V 1.1A TO92-3 12000: USD0.5985
8000: USD0.60999
4000: USD0.64049
1000: USD0.68037
500: USD0.83522
100: USD0.9854
10: USD1.267
1: USD1.55
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1081
ZVN4306AVSTZ
ZVN4306AVSTZ-ND
Diodes Incorporated MOSFET N-CH 60V 1.1A E-LINE 10000: USD0.59489
6000: USD0.62368
2000: USD0.65486
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ZVN4306AVSTOA
ZVN4306AVSTOA-ND
Diodes Incorporated MOSFET N-CH 60V 1.1A E-LINE BuyNow
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Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
ZVN4306AV
Diodes Incorporated Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line - Bulk (Alt: ZVN4306AV) 4000: USD0.5985
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2500

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
522-ZVN4306AV
Diodes Incorporated MOSFETs Avalanche 1: USD1.6
10: USD1.31
100: USD1.02
500: USD0.861
1000: USD0.702
2000: USD0.684
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5390

Arrow Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
V36:1790_06707904
Diodes Incorporated Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line 12000: USD0.5971
8000: USD0.6084
4000: USD0.6385
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Future Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
Diodes Incorporated N-Channel 60 V 0.33 Ohm Through Hole Enhancement Mode DMOS FET - TO-92 4000: USD0.63
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Verical

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
74090321
Zetex / Diodes Inc Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line 166: USD0.6385
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166

Bristol Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
Zetex / Diodes Inc RFQ
3961

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
ZVN4306AV
Diodes Incorporated Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line (Alt: ZVN4306AV) BuyNow
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Component Electronics, Inc

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
Diodes Incorporated IN STOCK SHIP TODAY 1000: USD2
100: USD2.31
1: USD3.08
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Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
ZVN4306AV
Diodes Incorporated RFQ
7297

South Electronics

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ZVN4306AV
Zetex / Diodes Inc ZVN4306AV RFQ
0

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