n-channel enhancement mode vertical dmos fet issue 3 C july 94 features * 60 volt v ds *r ds(on) = 0.33 w * spice model available applications * dc-dc convertors * solenoids / relay drivers for automotive absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 1.1 a practical continuous drain current at t amb =25c i dp 1.3 a pulsed drain current i dm 15 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 850 mw practical power dissipation at t amb =25c* p totp 1.13 w operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v id=1ma, v ds =v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 12 a v ds =10v, v gs =10v static drain-source on-state resistance (1) r ds(on) 0.22 0.32 0.33 0.45 w w v gs =10v,i d =3a v gs =5v, i d =1.5a forward transconductance (1)(2) g fs 700 ms v ds =25v,i d =3a e-line to92 compatible ZVN4306A 3-390 d g s
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. input capacitance (2) c iss 350 pf common source output capacitance (2) c oss 140 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 30 pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, v gen =10v, i d =3a rise time (2)(3) t r 25 ns turn-off delay time (2)(3) t d(off) 30 ns fall time (2)(3) t f 16 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZVN4306A 3-391 -40 0.50 0.25 0.0001 50 150 100 derating curve t -temperature (c) max power dissipation - (w atts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 1.0 0.75 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p am bie nt t e mpe r atur e d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05
typical characteristics saturation characteristics v ds - drain source voltage (volts) 012345678910 i d - drain current (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r ds( o n) a n d v gs(th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rc e r esi s ta n c e r d s ( o n ) gate threshold voltage v gs(th) i d= 3a v gs= 10v i d= 1ma v gs= v ds 2.6 225 0 4 1 2 7 6 5 3 10 9 8 10v 8v 9v 7v 5v 4v 6v 3.5v v gs= 20v 12v on-resistance v drain current i d- drain current (amps) r ds(on) -drain source on resistance ( w ) 0.1 10 100 3.5v 5v v gs =3v 6v 0.1 10 1.0 1 10v 3v 12 11 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacitance (pf) c oss c iss c rss 01020 304050607080 0 300 200 100 400 500 q-charge (nc) v g s -gate source voltage (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v dd = 20v i d= 3a 40v 60v 123 456789 101112 transconductance v drain current i d(on) - drain current (amps ) g f s -t ransconductance (s) 02 4 6810 v ds= 10v 0 1 2 4 3 5 12 14 16 18 20 8v ZVN4306A 3-392
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