APTM120DA30CT1G APTM120DA30CT1G ? rev 0 september, 2009 www.microsemi.com 1 ? 5 11 cr1 q2 10 9 12 ntc 12 3 4 6 5 pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdo wn voltage 1200 v t c = 25c 31 i d continuous drain current t c = 80c 23 i dm pulsed drain current 195 a v gs gate - source voltage 30 v r dson drain - source on resistance 360 m p d maximum power dissipation t c = 25c 657 w i ar avalanche current (repetitive and non repetitive) 25 a application ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? power mos 8? mosfet - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? very low stray inductance ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant boost chopper mosfet + sic chopper diode power module v dss = 1200v r dson = 300m typ @ tj = 25c i d = 31a @ tc = 25c
APTM120DA30CT1G APTM120DA30CT1G ? rev 0 september, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 100 i dss zero gate voltage drain current v ds =1200v v gs = 0v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 25a 300 360 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 4 5 v i gss gate ? source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 14560 c oss output capacitance 1340 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 172 pf q g total gate charge 560 q gs gate ? source charge 90 q gd gate ? drain charge v gs = 10v v bus = 600v i d = 25a 265 nc t d(on) turn-on delay time 100 t r rise time 60 t d(off) turn-off delay time 315 t f fall time resistive switching @ 25c v gs = 15v v bus = 800v i d = 25a r g = 2.2 90 ns sic chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 64 400 i rm maximum reverse leakage current v r =1200v t j = 175c 112 2000 a i f dc forward current tc = 100c 20 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 20a t j = 175c 2.3 3 v q c total capacitive charge i f = 20a, v r = 600v di/dt =1000a/s 80 nc f = 1mhz, v r = 200v 192 c total capacitance f = 1mhz, v r = 400v 138 pf thermal and package characteristics symbol characteristic min typ max unit transistor 0.19 r thjc junction to case thermal resistance sic diode 1 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g
APTM120DA30CT1G APTM120DA30CT1G ? rev 0 september, 2009 www.microsemi.com 3 ? 5 temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com typical mosfet performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single p ulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maxim um effective transient therm al im pedance, junction to case vs pulse duration t: thermistor temperature r t : thermistor value at t
APTM120DA30CT1G APTM120DA30CT1G ? rev 0 september, 2009 www.microsemi.com 4 ? 5 low voltage output characteristics t j =25c t j =125c 0 20 40 60 80 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) v gs =10v low voltage output characteristics 4.5v 5v 0 10 20 30 40 50 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =6, 7, 8 & 9v t j =125c normalized r ds(on) vs. temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 t j , junction temperature (c) r dson , drain to source on resistance v gs =10v i d =25a transfert characteristics t j =25c t j =125c 0 10 20 30 40 0123456 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d(on) xr ds(on) max 250s pulse test @ < 0.5 duty cycle gate charge vs gate to source v ds =240v v ds =600v v ds =960v 0 2 4 6 8 10 12 0 100 200 300 400 500 600 gate charge (nc) v gs , gate to source voltage i d =25a t j =25c ciss crss coss 10 100 1000 10000 100000 0 50 100 150 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage
APTM120DA30CT1G APTM120DA30CT1G ? rev 0 september, 2009 www.microsemi.com 5 ? 5 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 200 400 600 800 1000 1200 1400 1 10 100 1000 v r reverse voltage c, capacitance (pf) microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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