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savantic semiconductor product specification silicon npn power transistors 2SC3831 d escription with to-3pn package high voltage high speed switching applications for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 10 v i c collector current 10 a i cp collector current-pulse 20 a i b base current 4 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3831 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma; i b =0 500 v v cesat collector-emitter saturation voltage i c =5a i b =1.0a 0.5 v v besat base-emitter saturation voltage i c =5a ;i b =1.0a 1.3 v i cbo collector cut-off current v cb =600v; i e =0 1 ma i ebo emitter cut-off current v eb =10v; i c =0 0.1 ma h fe dc current gain i c =5a ; v ce =4v 10 30 f t transition frequency i c =1a ; v ce =12v 8 mhz c ob output capacitance f=1mhz ; v cb =10v 105 pf switching times t on turn-on time 1.0 s t stg storage time 4.5 s t f fall time i c =5a; v cc =200v i b1 =0.5a; i b2 =-1a r l =40 @ 0.5 s savantic semiconductor product specification 3 silicon npn power transistors 2SC3831 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) savantic semiconductor product specification 4 silicon npn power transistors 2SC3831 |
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