www.siliconstandard.com 1 of 9 SSM4816SM re v . 1 . 01 4 /16/2004 dual n-channel mosfet with schottky diode simple drive requirement mosfet -1 bv dss 30v suitable for dc-dc converters r ds(on) 22mw fast switching performance i d 6.7a mosfet-2 bv dss 30v r ds(on) 13mw description i d 11.5a absolute maximum ratings symbol rating units mosfet-2 v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d @ t a =25 c continuous drain current 3 11.5 a i d @ t a =70 c continuous drain current 3 9.2 a i dm pulsed drain current 1 40 a p d @ t a =25 c total power dissipation 2.4 w linear derating factor 0.02 w/c t stg storage temperature range -55 to 150 c t j operating junction temperature range -55 to 150 c symbol units max. rthj-a (mosfet-1) thermal resistance junction-ambient 3 90 c/w rthj-a (mosfet-2) thermal resistance junction-ambient 3 53 c/w rthj-a (schottky) thermal resistance junction-ambient 3 60 c/w 1.4 0.01 42 52 value thermal data typ. 70 parameter parameter 6.7 5.3 30 30 20 mosfet-1 advanced power mosfets from silicon standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as dc/dc converters. g1 s2/a s2/a g2 d1 s1/d2 s1/d2 s1/d2 so-8 g1 d1 s1/d2 g2 n -channel mosfet 1 s2/a n -channel mosfet 2 schottky diode
www.siliconstandard.com 2 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 mosfet-1 electrical characteristics @ t j =25 o c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.03 - v/ c r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 22 mw v gs =4.5v, i d =5a - - 30 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 10 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =6a - 11 18 nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7 - nc t d(on) turn-on delay time 2 v ds =15v - 9 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3w , v gs =10v - 22 - ns t f fall time r d =15 w -7- ns c iss input capacitance v gs =0v - 780 1250 pf c oss output capacitance v ds =25v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 50 - pf r g gate resistance f=1.0mhz - 1.25 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =6a, v gs =0v - 21 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc
www.siliconstandard.com 3 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 mosfet-2 electrical characteristics @ t j =25 o c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c,i d =1ma - 0.03 - v/c r ds(on) static drain-source on-resistance 2 v gs =10v, i d =11a - - 13 mw v gs =4.5v, i d =8a - - 18.5 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =11a - 15 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 100 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 1 ma i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =8a - 20 30 nc q gs gate-source charge v ds =24v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 12 - nc t d(on) turn-on delay time 2 v ds =15v - 12 - ns t r rise time i d =1a - 8 - ns t d(off) turn-off delay time r g =3.3w, v gs =10v - 31 - ns t f fall time r d =15w -12- ns c iss input capacitance v gs =0v - 1450 2320 pf c oss output capacitance v ds =25v - 320 - pf c rss reverse transfer capacitance f=1.0mhz - 230 - pf r g gate resistance f=1.0mhz - 1.5 - w source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 0.5 v t rr reverse recovery time 2 i s =8a, v gs =0v - 27 - ns q rr reverse recovery charge di/dt=100a/s - 18 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10 sec.
www.siliconstandard.com 4 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 schottky specifications @ t j =25 o c (unless otherwise specified) symbol parameter test conditions min. typ. max. units v f forward voltage drop i f =1.0a - 0.47 0.5 v i rm maximum reverse leakage current v r =30v - 0.004 0.2 ma maximum reverse leakage current v r =30v,t j =100c - 0.5 1 ma c t junction capacitance v r =10v - 66 - pf
www.siliconstandard.com 5 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 mosfet-1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature 0 20 40 60 80 100 120 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 60 70 80 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g =3.0v t a =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j ,junction temperature ( o c) normalized r ds(on) i d =6a v g =10v 16 20 24 28 32 35791 1 v gs , gate-to-source voltage (v) r ds(on) (m w ) i d =5a t a =25 o c 0.5 1 1.5 2 2.5 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
www.siliconstandard.com 6 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 mosfet-1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edanc e fig 11. switching time waveform fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 1 5 9 1 31 72 12 52 9 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 4 8 12 16 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =15v v ds =20v v ds =24v 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s d c t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
www.siliconstandard.com 7 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 mosfet-2 fig 1. typical output characteristics fig 2. typical output characteristics 0 30 60 90 120 150 180 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g = 3.0v 0 25 50 75 100 125 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g = 3.0v fig 3. on-resistance v s. gate voltage fig 4. normalized on-resistance v s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v s. reverse diode junction temperature 10 12 14 16 18 20 35791 1 v gs ,gate-to-source voltage (v) r ds(on) (m w ) i d =8a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =11a v g =10v 1.5 1.6 1.7 1.8 1.9 2.0 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 0.01 0.10 1.00 10.00 0.1 0.3 0.5 0.7 0.9 1.1 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
www.siliconstandard.com 8 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 mosfet-2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 4 8 12 16 0 1 02 03 04 05 0 q g , total gate charge (nc) v gs , gate to so ur ce voltage (v) v ds =15v v ds =20v v ds =24v i d =8a 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =100c/w t t 0.02 0.01 0.05 0.1 0.2 duty factore=0.5 single pulse
in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. www.siliconstandard.com 9 of 9 ssm 4 8 1 6 s m re v . 1 . 01 4 / 1 6 /2004 schottky fig 1. reverse current vs junction temperature fig 2. typical forward characteristics fig 3. typical junction capacitance 10 100 1000 1 5 9 1 31 72 12 52 9 v ds , drain-to-source voltage (v) c ,capacitance (pf) f =1.0mh z 0.0001 0.001 0.01 0.1 1 10 0 25 50 75 100 125 t j , junction temperature ( o c) i r , reverse current (ma) 30v 24v 1 10 0 0.3 0.6 0.9 1.2 1.5 v f , forward voltage drop (v) i f , forward current (a) t j =25 o c t j =150 o c
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