smd type ic www.kexin.com.cn 1 smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source hexfet power mosfet KRFR9210 features available in tape & reel surface mount fast switching p-channel dynamic dv/dt rating repetitive avalanche rated absolute maximum ratings ta = 25 parameter symbol rating unit continuous drain current, v gs @-10v,tc=25 i d -1.9 continuous drain current, v gs @ -10v,tc = 100 i d -1.2 pulsed drain current*1 i dm -7.6 power dissipation tc = 25 p d 25 power dissipation (pcb mount) ta = 25 p d 2.5 linear derating factor 0.2 linear derating factor (pcb mount) 0.02 gate-to-source voltage v gs 20 v single pulse avalanche energy*3 e as 300 mj avalanche current *1 i ar -1.9 a repetitive avalanche energy *1 e ar 2.5 mj peak diode recovery dv/dt *2 d v /d t -5 v/ns operating junction and storage temperature range t j ,t stg -55to+150 junction-to-case r jc 5 /w junction-to-ambient r ja 50 /w junction-to-ambient r ja 110 /w *1 repetitive rating; pulse width limited by max. junction temperature. *2 i sd -1.9a, d i /d t 70a/ s, v dd v (br)dss ,t j 150 *3 v dd =-50v,starting tj = 25 , l = 124 mh,r g =25 ,i as = -1.9a. a w w/
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d =- 250 a -200 v breakdown voltage temp. coefficient v(br)dss / t j i d = -1ma,reference to 25 -0.23 v/ static drain-to-source on-resistance r ds(on) v gs = -10v, i d = -1.1a*1 3.0 gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -2.0 -4.0 v forward transconductance g fs v ds = -50v, i d = -1.1a*1 0.98 s v ds = -200v, v gs = 0v -100 v ds = -200v, v gs =0v,t j = 150 -500 gate-to-source forward leakage v gs = 20v -100 gate-to-source reverse leakage v gs = -20v 100 total gate charge q g i d = -1.3a 8.9 gate-to-source charge q gs v ds = -160v 2.1 gate-to-drain ("miller") charge q gd v gs = -10v,*1 3.9 turn-on delay time t d(on) v dd = -100v 8.0 rise time t r i d = -2.3a 12 turn-off delay time t d(off) r g =24 11 fall time t f r d =41 *1 13 internal drain inductance l d 4.5 nh internal source inductance l s 7.5 nh input capacitance c iss v gs = 0v 170 output capacitance c oss v ds = -25v 54 reverse transfer capacitance c rss f = 1.0mhz 16 continuous source current body diode) i s -1.9 pulsed source current body diode) *2 i sm -7.6 diode forward voltage v sd t j =25 ,i s = -1.9a, v gs =0v*1 -5.8 v reverse recovery time t rr t j =25 ,i f = -2.3a 110 220 ns reverse recoverycharge q rr d i /d t = 100a/ s*1 0.56 1.1 c forward turn-on time ton intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) *1 pulse width 300 s; duty cycle 2%. *2 repetitive rating; pulse width limited bymax ns a i gss pf nc drain-to-source leakage current a na i dss KRFR9210
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