? semiconductor components industries, llc, 2005 march, 2005 ? rev. 3 1 publication order number: NTR0202PL/d NTR0202PL power mosfet ?20 v, ?400 ma, p?channel sot?23 package features ? low r ds(on) provides higher efficiency and extends battery life r dson = 0.80 , v gs = ?10 v r dson = 1.10 , v gs = ?4.5 v ? miniature sot?23 surface mount package saves board space ? pb?free package is available applications ? dc?dc converters ? computers ? printers ? pcmcia cards ? cellular and cordless telephones maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss ?20 v gate?to?source voltage ? continuous v gs 20 v continuous drain current @ t a = 25 c pulsed drain current (t p 10 s) i d i dm ?0.4 ?1.0 a total power dissipation @ t a = 25 c (note 1) p d 225 mw operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ? junction?to?ambient r ja 556 c/w source current (body diode) i s 0.4 a maximum lead temperature for soldering purposes, 1/8 from case for 10 s t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width 300 s, duty cycle 2%. d g s device package shipping 2 ordering information NTR0202PLt1 sot?23 3000 tape & reel p?channel NTR0202PLt3 sot?23 10,000 tape & reel http://onsemi.com ?20 v 550 m @ ?10 v r ds(on) typ ?400 ma i d max v (br)dss 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. sot?23 case 318 style 21 marking diagram/ pin assignment 2 pl = specific device code m = date code 3 1 3 drain 1 gate 2 source pl NTR0202PLt3g sot?23 (pb?free) 10,000 tape & reel NTR0202PLt1g sot?23 (pb?free) 3000 tape & reel m
NTR0202PL http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 v, i d = ?10 a) (positive temperature coefficient) v (br)dss ?20 33 v mv/ c zero gate voltage drain current (v ds = ?20 v, v gs = 0 v, t j = 25 c) (v ds = ?20 v, v gs = 0 v, t j = 150 c) i dss ?1.0 ?10 a gate?body leakage current (v gs = 20 v, v ds = 0 v) i gss 100 na on characteristics (note 2) gate threshold voltage (v ds = v gs , i d = ?250 a) (negative temperature coefficient) v gs(th) ?1.1 ?1.9 3.0 ?2.3 v mv/ c static drain?to?source on?resistance (v gs = ?10 v, i d = ?200 ma) (v gs = ?4.5 v, i d = ?50 ma) r ds(on) 0.55 0.80 0.80 1.10 forward transconductance (v ds = ?10 v, i d = ?200 ma) g fs 0.5 mhos dynamic characteristics input capacitance c iss 70 pf output capacitance (v ds = ?5.0 v, v gs = 0 v, f = 1.0 mhz ) c oss 74 reverse transfer capacitance f = 1 . 0 mhz) c rss 26 switching characteristics (note 3) turn?on delay time t d(on) 3.0 ns rise time (v dd = ?15 v, i d = ?200 ma, t r 6.0 turn?off delay time (v dd = ?15 v , i d = ?200 ma , v gs = ?10 v, r g = 6.0 ) t d(off) 18 fall time t f 4 total gate charge q tot 2.18 nc gate?source charge (v ds = ?15 v, i d = ?200 ma, v gs = ?10 v ) q gs 0.41 gate?drain charge v gs = ? 10 v) q gd 0.40 body?drain diode characteristics (note 2) diode forward voltage (note 2) (i s = ?400 ma, v gs = 0 v) (i s = ?400 ma, v gs = 0 v, t j = 150 c) v sd ?0.8 ?0.65 ?1.0 v reverse recovery time t rr 11.8 ns (i s = ?1.0 a, v gs = 0 v, di s /dt = 100 a/ s ) t a 9 di s /dt = 100 a/ s) t b 3 reverse recovery stored charge (i s = ?1.0 a, v gs = 0 v, di s /dt = 100 a/ s) q rr 0.007 c 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
NTR0202PL http://onsemi.com 3 0 0.25 0.5 0.75 0 0.25 0.5 0.75 1.0 ?v ds , drain?to?source voltage (volts) ?i d , drain current (amps) figure 1. on?region characteristics v gs = ?10 v ?6 v ?5.5 v ?5 v ?4.5 v ?4 v ?3.5 v ?3 v ?2.5 v t j = 25 c 0 0.25 0.5 0.75 1 0 12345 ?v gs , gate?to?source voltage (volts) ?i d , drain current (amps) figure 2. transfer characteristics v ds ?10 v t j = 25 c t j = 125 c t j = 40 c 0 0.5 1 1.5 0.125 0.25 0.375 0.5 ?i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) figure 3. on?resistance versus drain current t j = 150 c t j = 25 c t j = 40 c 0 0.25 0.5 0.75 1.0 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0 ?i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) figure 4. on?resistance versus drain current and gate voltage 0 0.5 1 1.5 2 2.5 ?40 ?15 10 35 60 85 110 135 t j , junction temperature ( c) r ds(on) , drain?to?source resistance (normalized) figure 5. on?resistance variation with temperature i d = ?0.05 a v gs = ?4.5 v i d = ?0.2 a v gs = ?10 v 0.1 1 10 1000 2 6 10 14 18 100 ?v ds , drain?to?source voltage (volts) figure 6. drain?to?source leakage current versus voltage v gs = 0 v t j = 150 c t j = 25 c ?i dss , leakage (na) 150 v gs = ?4.5 v v gs = ?10 v
NTR0202PL http://onsemi.com 4 0 20 40 60 80 100 10 5 0 5 10 15 20 ?gate?to?source or drain?to?source voltage (volts) figure 7. capacitance variation c rss c oss c iss t j = 25 c c, capacitance (pf) ?v gs ?v ds 0 2.5 5 7.5 10 0 0.5 1 1.5 2 q g , total gate charge (nc) ?v gs , gate?to?source voltage (volts) figure 8. gate?to?source and drain?to?source voltage versus total charge t j = 25 c i d = ?0.4 a q t q 2 q 1 ?v ds , drain?to?source voltage (volts) 1 100 1 10 100 10 t, time (ns) figure 9. resistive switching time variation versus gate resistance v dd = ?16 v i d = ?0.2 a v gs = ?4.5 v t r t d(off) t d(on) t f r g , gate resistance ( ) 0 0.25 0.5 0.75 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ?v sd , source?to?drain voltage (volts) ?i s , source current (amps) figure 10. diode forward voltage versus current v gs = 0 v t j = 25 c c rss c iss c rss c iss
NTR0202PL http://onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue ak *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 21: pin 1. gate 2. source 3. drain d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08.
NTR0202PL http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTR0202PL/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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