switches - chip 4 4 - 38 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC641 general description features functional diagram the HMC641 is a broadband non-re ective gaas phemt sp4t switch chip. covering dc to 18 ghz, this switch offers high isolation and low insertion loss and extends the frequency coverage of hittites sp4t switch product line. this switch also includes an on board binary decoder circuit which reduces the number of required logic control lines to two. the switch operates using a negative control voltage of 0/-5v, and requires a xed vss bias of -5v. all data is tested with the chip in a 50 ohm test xture con- nected via one 3.0 x 0.5 mil gold ribbon of minimal length on each rf port. broadband performance: dc - 18 ghz high isolation: 42 db @ 12 ghz low insertion loss: 2.1 db @ 12 ghz integrated 2:4 ttl decoder small size: 1.92 x 1.60 x 0.10 mm electrical speci cations, t a = +25 c, with 0/-5v control, vss= -5v, 50 ohm system typical applications the HMC641 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military & space hybrids ? test instrumentation gaas mmic sp4t non-reflective switch, dc - 18 ghz v01.0108 parameter frequency min. typ. max. units insertion loss dc - 12 ghz dc - 18 ghz 1.8 2.8 2.1 3.1 db db isolation (rfc to rf1 - rf4) dc - 12 ghz dc - 18 ghz 39 37 42 40 db db return loss on state dc - 12 ghz dc - 18 ghz 12 11 15 14 db db return loss off state dc - 18 ghz 12 15 db input power for 1 db compression 2.05- 18 ghz 21 24 dbm input third order intercept (two-tone input power= +14 dbm each tone) 0.05 - 18 ghz 37 40 dbm switching characteristics trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) dc - 18ghz 14 95 ns ns
switches - chip 4 4 - 39 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input third order intercept point @ +14 dbm tone power return loss 1 db input compression point insertion loss vs. temperature isolation HMC641 v01.0108 gaas mmic sp4t non-reflective switch, dc - 18 ghz -5 -4 -3 -2 -1 0 0 2 4 6 8 10 12 14 16 18 20 +25 c +85 c - 55 c insertion loss (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 rf1 rf2 rf3 rf4 isolation (db) frequency (ghz) -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 rfc rf1,2,3,4 on rf1,2,3,4 off return loss (db) frequency (ghz) 18 20 22 24 26 28 024681012141618 input compression point (dbm) frequency (ghz) 15 20 25 30 35 40 45 50 024681012141618 ip3 (dbm) frequency (ghz)
switches - chip 4 4 - 40 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC641 v01.0108 gaas mmic sp4t non-reflective switch, dc - 18 ghz ip3 vs. input tone power @ 500 mhz ip3 vs. input tone power @ 12 ghz 34 36 38 40 42 44 02468101214 ip3 (dbm) power (dbm) 34 36 38 40 42 44 02468101214 ip3 (dbm) power (dbm) truth table absolute maximum ratings bias voltage & current control input signal path state a b rfc to: high high rf1 low high rf2 high low rf3 low low rf4 vss range= -5.0 vdc 10% vss (vdc) iss (typ) (ma) iss (max) (ma) -5 3 6 bias voltage range (vss) -7 vdc control voltage range (a & b) vss -0.5v to +1 vdc channel temperature 150 c thermal resistance channel to die bottom (insertion loss path) 188 c/w thermal resistance channel to die bottom (terminated path) 222 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c maximum input power +24 dbm ttl/cmos control voltages state bias condition low -3v to 0 vdc @ 60 ua typ. high -5 to -4.2 vdc @ 5 ua typ. electrostatic sensitive device observe handling precautions
switches - chip 4 4 - 41 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing notes: 1. dimensions in inches [millimeters]. 2. die thickness is 0.004. 3. typical bond pad is 0.004 square. 4. typical bond pad spacing is 0.006 center to center. 5. bond pad metallization: gold. 6. backside metallization: gold. 7. backside metal is ground. 8. no connection required for unlabeled bond pads. die packaging information [1] standard alternate wp-18 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC641 v01.0108 gaas mmic sp4t non-reflective switch, dc - 18 ghz
switches - chip 4 4 - 42 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com ttl interface circuit note: control inputs a and b can be driven directly with ttl logic with -5 volts applied to the hct logic gates vee pin and to vss pad of the rf switch. pad descriptions pad number function description interface schematic 1, 2, 3, 7, 8 rfc, rf1, rf2, rf3, rf4 these pads are dc coupled and matched to 50 ohms. blocking capacitors are required if rf line potential is not equal to 0v. 4 ctla see truth table and control voltage table. 5 ctlb see truth table and control voltage table. 6 vss supply voltage -5.0 vdc 10%. die bottom gnd die bottom must be connected to rf/dc ground. HMC641 v01.0108 gaas mmic sp4t non-reflective switch, dc - 18 ghz
switches - chip 4 4 - 43 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram HMC641 v01.0108 gaas mmic sp4t non-reflective switch, dc - 18 ghz
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