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| savantic semiconductor product specification silicon npn power transistors 2SC2752 d escription with to-126 package high breakdown voltage low collector saturation voltage applications low power switching regulator dc-dc converter high voltage switch pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 500 v v ceo collector- emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 0.5 a i cm collector current-peak 1.0 a i b base current 0.25 a t a =25 1.0 p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2752 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.3a; i b1 =0.06a,l=10mh 400 v v cesat collector-emitter saturation voltage i c =300ma; i b =60ma 1.0 v v besat base-emitter saturation voltage i c =300ma; i b =60ma 1.2 v i cex collector cut-off current v ce =400v; v be =-1.5v t c =125 0.01 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =50ma ; v ce =5v 20 80 h fe -2 dc current gain i c =300ma ; v ce =5v 10 switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c =300ma; i b1 =-i b2 =60ma pw ? 50s;v cc ? 150v r l =500 a 1.0 s h fe-1 classifications m l k 20-40 30-60 40-80 savantic semiconductor product specification 3 silicon npn power transistors 2SC2752 package outline fig.2 outline dimensions |
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