dmp22d6ut document number: ds31585 rev. 2 - 2 1 of 4 www.diodes.com november 2008 ? diodes incorporated dmp22d6ut new product p-channel enhancem ent mode mosfet features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? esd protected gate ? "green" device (note 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-523 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.002 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v drain current (note 1) steady state t a = 25 c t a = 85 c i d -430 -310 ma pulsed drain current (note 3) i dm -750 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient r ja 833 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250ma zero gate voltage drain current i dss ? ? -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 1.0 a v gs = 4.5v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) -0.5 ? -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 0.7 1.1 1.7 1.1 1.6 2.6 v gs = -4.5v, i d = -430ma v gs = -2.5v, i d = -300ma v gs = -1.8v, i d = -150ma forward transfer admittance |y fs | 200 ? ? ms v ds =10v, i d = 0.2a diode forward voltage (note 5) v sd ? ? -1.4 v v gs = 0v, i s = -115ma dynamic characteristics input capacitance c iss ? ? 175 pf v ds = -16v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? 30 pf reverse transfer capacitance c rss ? ? 20 pf notes: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1% 4. diodes inc.?s ?green? policy can be found on our w ebsite at http://www.diodes.c om/products/lead_free/index.php. 5. short duration pulse test used to minimize self-heating effect. sot-523 top view e q uivalent circuit top view source gate protection diode gate drai n g s d esd protected
dmp22d6ut document number: ds31585 rev. 2 - 2 2 of 4 www.diodes.com november 2008 ? diodes incorporated dmp22d6ut new product 0 0 -v , drain-source voltage (v) fig. 1 typical output characteristics ds -i , d r ain c u r r en t (a) d -v , gate-source voltage (v) fig. 2 typical transfer characteristics gs -i , d r ain c u r r en t (a) d t , ambient temperature (c) fig. 3 gate threshold voltage vs. ambient temperature a -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) -i , drain-source current (a) fig. 4 static drain-source on-resistance vs. drain current d -i , drain-source current (a) fig. 5 static drain-source on-resistance vs. drain current d -i , drain-source current (a) fig. 6 static drain-source on-resistance vs. drain-source current d 10
dmp22d6ut document number: ds31585 rev. 2 - 2 3 of 4 www.diodes.com november 2008 ? diodes incorporated dmp22d6ut new product t , ambient temperature (c) fig. 7 static drain-source on-state resistance vs. ambient temperature a -v , source-drain voltage (v) fig. 8 reverse drain current vs. source-drain voltage ds -i , drain current (a) fig. 9 forward transfer admittance vs. drain current d -v , drain-source voltage (v) fig. 10 typical capacitance ds 0 30 60 90 120 150 ordering information (note 6) part number case packaging DMP22D6UT-7 sot-523 3000/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d pba = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) pba ym
dmp22d6ut document number: ds31585 rev. 2 - 2 4 of 4 www.diodes.com november 2008 ? diodes incorporated dmp22d6ut new product package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d ? ? 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 ? all dimensions in mm dimensions value (in mm) z 1.8 x 0.4 y 0.51 c 1.3 e 0.7 a m j l d b c h k g n x e y c z
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