MMBT7002K MMBT7002K n n-channel enhancement mode fet with protected gate n-kanal fet mit gateschutzdiode C anreicherungstyp n version 2011-02-01 dimensions - ma?e [mm] 1 = g 2 = s 3 = d power dissipation C verlustleistung 350 mw plastic case kunststoffgeh?use sot-23 (to-236) weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) MMBT7002K drain-source-voltage C drain-source-spannung v dss 60 v gate-source-voltage C gate-source-spannung dc esd v gss v gss 20 v 2 kv power dissipation C verlustleistung p tot 350 mw drain current continuos C drainstrom (dc) i d 115 ma drain current pulsed C drainstrom gepulst t p < 10 s i dm 800 ma operating junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s 150c -55+150c ? diotec semiconductor ag http://www.diotec.com/ 1 2 . 5 m a x 1 . 3 0 . 1 1.1 0.4 2.9 0.1 1 2 3 type code 1.9
MMBT7002K characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. drain-source breakdown voltage C drain-source-durchbruchspannung i d = 10 a bv dss 60 v drain-source leakage current C drain-source leckstrom g short v ds = 60 v i dss 1 a gate-source leakage current C gate-source leckstrom v gs = 20 v i gss 10 a gate-threshold voltage C gate-source schwellspannung v gs = v ds , i d = 250 a v gs(th) 1 v 2.5 v drain-source on-voltage C drain-source-spannung v gs = 10 v , i d = 500 ma v gs = 5 v , i d = 50 ma v ds(on) 3.75 v 1.5 v drain-source on-state resistance C drain-source einschaltwiderstand v gs = 10 v , i d = 500 ma v gs = 4.5 v, i d = 200 ma r ds(on) r ds(on) 3 4 forward transconductance C bertragungssteilheit v ds 10 v ds(on) , i d = 200 ma g fs 80 ms input capacitance C eingangskapazit?t v ds = 25 v, f = 1 mhz c iss 50 pf output capacitance C ausgangskapazit?t v ds = 25 v, f = 1 mhz c oss 25 pf reverse transfer capacitance C rckwirkungskapazit?t v ds = 25 v, f = 1 mhz c rss 5 pf turn-on time C einschaltzeit v dd = 30 v, r l = 150 , i d = 0.2 a, v gs = 10 v, r g = 25 t on 20 ns turn-off delay time C ausschaltverz?gerung v dd = 30 v, r l = 150 , i d = 0.2 a, v gs = 10 v, r g = 25 t off 20 ns 2 http://www.diotec.com/ ? diotec semiconductor ag
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