HL1566AF 1.55 m laser diode with ea modulator description the HL1566AF is a 1.55 m ingaasp distributed-feedback laser diode (dfb-ld) with a mu lti-quantum well (mqw) structure. an electroabsorption (ea) modulator is integrated with the laser diode. it is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 gbps external modulation systems for up to 600 km. features long wavelength output: l p = 1550 nm typ. high extinction ratio: 13 db min. at v r(ea) = C2 v fast pulse response: tr/tf 80 ps dynamic single longitudinal mode: sr = 40 db typ. package: open air package (chip on carrier) with micro strip-line modulator ld 50 w internal circuit
?HL1566AF package type
?HL1566AF: af 1 3 2
HL1566AF 2 absolute maximum ratings (t c = 25c) item symbol value unit ld forward current i f 100 ma laser diode reverse voltage v r(ld) 2v modulator reverse voltage v r(ea) C5 v operating temperature topr 10 to 40 c storage temperature *1 tstg C40 to 85 c note: 1. without condensation optical and electrical characteristics (t c = 25c) item symbol min typ max unit test conditions threshold current ith 10 20 ma optical output power p o 3.5 mw i f(ld) = 50 ma, v r(ea) = 0 v extinction ratio er 13 db i f(ld) = 50 ma, v r(ea) = 0/C2 v lasing wavelength l p 1530 1550 1570 nm 2.5 gbps (nrz) side-mode suppression ratio sr 30 40 db 2.5 gbps (nrz) beam divergence (parallel) q // 30 deg. p o = 3.5 mw, fwhm beam divergence (perpendicular) q^ 40 deg. p o = 3.5 mw, fwhm rise time tr 80 ps 2.5 gbps (nrz) fall time tr 80 ps 2.5 gbps (nrz) cutoff frequency s 21 4 ghz i f(ld) = 50 ma, v r(ea) = C1 v rf return loss s 11 10 db i f(ld) = 50 ma, v r(ea) = C1 v, f 2 3 ghz
HL1566AF 3 typical characteristics curves optical output power p o (mw) 10 2 020 60 80 forward current i f (ma) 8 6 4 100 optical output power vs. forward current t c =25 c
v r (ea)=0 0 40 - 40 angle q (deg) t c =25 c - 20 0 20 40 - 40 - 20 0 20 40 p o =3.5 mw
v r (ea)=0 t c =25 c relative intensity parallel perpendicular far field pattern threshold current ith (ma) 100 020 60 case temperature t c ( c) 10 threshold current vs. case temperature 1 40 p o =3.5 mw
v r (ea)=0
HL1566AF 4 typical characteristics curves (cont) extinction ratio (db) 0 - 30 01 23 modulator reverse voltage v r (ea) (v) - 10 - 20 4 extinction ratio vs. modulator reverse voltage i f (ld)=50ma t c =25 c - 40 bit error rate received power (dbm) bit error rate vs. received power - 40 - 20 - 36 - 32 - 28 - 24 10 - 12 10 - 10 10 - 8 10 - 6 10 - 4 2.48832gbps (nrz) i f (ld)=50ma v r (ea)= - 1.2 v v p =2 v p-p prbs=2 23 - 1 no fiber 600 km fiber
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