inchange semiconductor isc product specification isc silicon npn power transistor BD329 description dc current gain- : h fe = 85~375(min)@ i c = 0.5a collector-emitter sustaining voltage - : v ceo(sus) = 20v(min) complement to type bd330 applications especially for battery equipped applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 32 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a i bm base current-peak 1 a p c collector power dissipation @ t c =25 15 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 7 /w r th j-a thermal resistance,junction to ambient 100 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BD329 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 30ma; i b = 0 20 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 0.5 v v be( on )-1 base-emitter on voltage i c = 5ma; v ce = 10v 0.6 v v be( on )-2 base-emitter on voltage i c = 2a; v ce = 1v 1.2 v i cbo collector cutoff current v cb = 32v; i e = 0 v cb = 32v; i e = 0,t c =150 0.1 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 a h fe-1 dc current gain i c = 5ma; v ce = 10v 50 h fe-2 dc current gain i c = 0.5a; v ce = 1v 85 375 h fe-3 dc current gain i c = 2a; v ce = 1v 40 f t current-gain?bandwidth product i c = 50ma; v ce = 5v; f test = 100mhz 130 mhz isc website www.iscsemi.cn 2
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