abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rsm = 5500 v i f(av)m = 4700 a i f(rms) = 7390 a i fsm = 7310 3 a v f0 = 0.8 v r f = 0.107 m w rectifier diode 5sdd 50n5500 doc. no. 5sya1169-00 sep. 04 patented free-floating silicon technology very low on-state losses optimum power handling capability blocking maximum rated values 1) parameter symbol conditions value unit repetitive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t j = 0...150c 5000 v non - repetitive peak reverse voltage v rsm f = 5 hz, t p = 10ms, t j = 0...150c 5500 v characteristic values parameter symbol conditions min typ max unit max. (reverse) leakage current i rrm v rrm , tj = 150c 400 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 81 90 108 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 2.8 kg housing thickness h f m = 90 kn, t a = 25 c 34.1 35.9 mm surface creepage distance d s 56 mm air strike distance d a 22 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5sdd 50n5500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1169-00 sep. 04 page 2 of 6 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m 50 hz, half sine wave, t c = 90 c 4700 a max. rms on-state current i f(rms) 7390 a max. peak non-repetitive surge current i fsm 7310 3 a limiting load integral i 2 t t p = 10 ms, t j = 150c, v r = 0 v 27.510 6 a 2 s max. peak non-repetitive surge current i fsm 8010 3 a limiting load integral i 2 t t p = 8.3 ms, t j = 150c, v r = 0 v 26.710 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 5000 a, t j = 150c 1.34 v threshold voltage v (t0) 0.8 v slope resistance r t t j = 150c i t = 2500...8000 a 0.107 m w switching characteristic values parameter symbol conditions min typ max unit recovery charge q rr di f /dt = -10 a/ s, v r = 200 v i frm = 4000 a, t j = 150c 18000 m as
5sdd 50n5500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1169-00 sep. 04 page 3 of 6 thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj 0 150 c storage temperature range t stg -40 150 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 81...108 kn 5.7 k/kw r th(j-c)a anode-side cooled f m = 81...108 kn 11.4 k/kw r th(j-c)c cathode-side cooled f m = 81...108 kn 11.4 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 81...108 kn 1 k/kw r th(c-h) single-side cooled f m = 81...108 kn 2 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 3.709 1.262 0.475 0.251 t i (s) 0.8296 0.1107 0.0114 0.0024 fig. 1 transient thermal impedance junction-to- case.
5sdd 50n5500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1169-00 sep. 04 page 4 of 6 max. on-state characteristic model: v f 25 f tvj f tvj f tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i f = 300 ? 110000 a max. on-state characteristic model: v f 150 f tvj f tvj f tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i f = 300 ? 110000 a a 25 b 25 c 25 d 25 a 150 b 150 c 150 d 150 2.3210 -6 61.8510 -6 149.910 -3 -2.6710 -3 -79.5210 -6 83.8010 -6 99.4110 -3 1.0910 -3 fig. 2 isothermal on-state characteristics fig. 3 isothermal on-state characteristics fig. 4 on-state power losses vs average on-state current. fig. 5 max. permissible case temperature vs average on-state current.
5sdd 50n5500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1169-00 sep. 04 page 5 of 6 fig. 6 surge on-state current vs. pulse length. half- sine wave. fig. 7 surge on-state current vs. number of pulses. half-sine wave, 10 ms, 50hz. fig. 8 recovery charge vs. decay rate of on-state current. fig. 9 peak reverse recovery current vs. decay rate of on-state current.
5sdd 50n5500 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1169-00 sep. 04 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors fig. 10 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. related application notes: doc. nr titel 5sya 2020 design of rc-snubbers for phase control applications 5sya 2029 designing large rectifiers with high power diodes 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors please refer to http://www.abb.com/semiconductors for actual versions.
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